Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Qi-zhu Li"'
Autor:
Qi-zhu Li, Yuan-qing Huang, Ji-qiang Ning, Cheng Jiang, Xu Wang, Hong-mei Chen, Xiao Li, Rui-ying Zhang, Kai Zhang, Jia-hua Min, Yong Peng, Zi-yang Zhang
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)
Abstract In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB a
Externí odkaz:
https://doaj.org/article/ea41398709654f88ad61be4ca722697b
Effects of Modulation P-Doping on Thermal Stability of InAs/GaAs Quantum Dot Superluminescent Diodes
Autor:
Jiqiang Ning, Peng Jin, Liu Qinglu, Hongmei Chen, Zhanguo Wang, Yuanqing Huang, Qi-zhu Li, Zong-Yan Zhao, Ziyang Zhang, Chuncai Hou
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:7536-7541
Autor:
Jie Wang, Yuanqing Huang, Chuncai Hou, Xu Wang, Ruiying Zhang, Jia-hua Min, Hongmei Chen, Jiqiang Ning, Ziyang Zhang, Qi-zhu Li, Changcheng Zheng
Publikováno v:
ACS Photonics. 5:1084-1093
Multiple-layer InAs/GaAs quantum dot (QD) laser structures were etched to remove the p-side AlGaAs cladding layers to investigate the temperature-dependent photoluminescence (PL) characteristics. Four QD samples, including undoped as grown QDs, p-dop
Autor:
Hongmei Chen, Ruiying Zhang, Jiqiang Ning, Jia-hua Min, Ziyang Zhang, Xiao Li, Yuanqing Huang, Kai Zhang, Yong Peng, Xu Wang, Cheng Jiang, Qi-zhu Li
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)
Nanoscale Research Letters
Nanoscale Research Letters
In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB and a high