Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Qamar-ul Wahab"'
Autor:
Sadia Muniza Faraz, Syed Riaz un Nabi Jafri, Zarreen Tajvar, Naveed ul Hassan Alvi, Qamar-ul Wahab, Omer Nur
Publikováno v:
Elektronika ir Elektrotechnika, Vol 27, Iss 4, Pp 49-54 (2021)
The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxy
Externí odkaz:
https://doaj.org/article/89bdada657714247970a096f0943548b
Autor:
Omer Nur, Wakeel Shah, Hashim Raza Khan, Naveed ul Hassan Alvi, Syed Riaz un Nabi Jafri, Sadia Muniza Faraz, Qamar Ul Wahab
Publikováno v:
Open Physics, Vol 19, Iss 1, Pp 467-476 (2021)
The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are synthesized by the low-temperature aqueous solution growth technique and a
Autor:
Syed Riaz un Nabi Jafri, Naveed ul Hassan Alvi, Zarreen Tajvar, Omer Nur, Qamar Ul Wahab, Sadia Muniza Faraz
Publikováno v:
Elektronika ir Elektrotechnika, Vol 27, Iss 4, Pp 49-54 (2021)
The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxy
Publikováno v:
Advances in Condensed Matter Physics, Vol 2020 (2020)
The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density,
Publikováno v:
Integration. 60:63-73
In this paper, a modified resistive shunt feedback topology is proposed that performs noise cancelation and serves as an opposite polarity non-linearity generator to cancel the distortion produced ...
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NEWCAS
Current mode class-D power amplifiers (CMCD-PA) are attractive for fully integrated PA implementation as the output capacitance of the active device can be absorbed in the output matching network that can be realized with minimum number of components
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AEU - International Journal of Electronics and Communications. 69:109-118
Wideband noise cancelling LNAs reported in recent literature consume very large power because of the additional stages required for noise cancelling. This makes them inappropriate for portable applications. Based on this fact, the design of a low pow
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Microelectronics Journal. 44:774-786
The realization of Software Defined Radio (SDR) requires flexible RF front-end to accommodate multiple standards in different frequency bands. In this review paper, we survey the literature over the period 1995-2011 and discuss the state-of-the-art m
Publikováno v:
Analog Integrated Circuits and Signal Processing. 75:31-40
Class-E amplifiers are attractive for wireless handsets because of their high efficiency and simple implementation. However, it requires inductors in its output matching network that are inherently low Q components affecting efficiency and may requir