Quantum Conductors Formation and Resistive Switching Memory Effects in Zirconia Nanotubes

Autor: I. A. Petrenyov, Alexander Vokhmintsev, Ilya Weinstein, R. V. Kamalov

Publikováno v: Nanotechnology

The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with quantized

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Quantum conductors formation and resistive switching memory effects in zirconia nanotubes.

Autor: Vokhmintsev A; NANOTECH Centre, Ural Federal University, Ekaterinburg 620002, Russia., Petrenyov I; NANOTECH Centre, Ural Federal University, Ekaterinburg 620002, Russia., Kamalov R; NANOTECH Centre, Ural Federal University, Ekaterinburg 620002, Russia., Weinstein I; NANOTECH Centre, Ural Federal University, Ekaterinburg 620002, Russia.; Institute of Metallurgy of the Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russia.

Publikováno v: Nanotechnology [Nanotechnology] 2021 Nov 29; Vol. 33 (7). Date of Electronic Publication: 2021 Nov 29.