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pro vyhledávání: '"QUANTUM CONDUCTIVE FILAMENT"'
Publikováno v:
Nanotechnology
The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with quantized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd29e36271d21b947ca4d2d1b2e01a8e
