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Autor:
B. Agarwal, James Guthrie, D. Mensa, Lorene Samoska, Uddalak Bhattacharya, Rajasekhar Pullela, Mark J. W. Rodwell, Qing-Hung Lee
Publikováno v:
International Journal of High Speed Electronics and Systems. :643-670
Transferred-substrate heterojunction bipolar transistors (HBTs) have demonstrated very high bandwidths and are potential candidates for very high speed integrated circuit (IC) applications. The transferred-substrate process permits fabrication of nar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3ebb9d87ff15752e4f680af7c76d92c
https://doi.org/10.1142/s0129156498000270
https://doi.org/10.1142/s0129156498000270
