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Publikováno v:
Acta Horticulturae. :353-357
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3adcb4e561b2b1104e813176271cb4d
https://doi.org/10.17660/actahortic.2001.558.57
https://doi.org/10.17660/actahortic.2001.558.57
Publikováno v:
Acta Horticulturae. :343-351
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4a0db079e22d19728bb295d7db191d1
https://doi.org/10.17660/actahortic.2001.558.56
https://doi.org/10.17660/actahortic.2001.558.56
Publikováno v:
Materials Science and Engineering: R: Reports. 16:43-96
Silicides are widely used in silicon integrated circuits as contacts and interconnections. In many applications silicides are used on polycrystalline silicon (polysilicon) such as the gates of FETs and the emitter of bipolar transistors. The use of s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ddc11b538cb16316cdd1c77234c504
https://doi.org/10.1016/0927-796x(95)00186-7
https://doi.org/10.1016/0927-796x(95)00186-7
Autor:
J. W. Mayer, Q.Z Hong
Publikováno v:
Thin Solid Films. 223:235-241
Solid phase epitaxy (SPE) of GexSi1−x(0.25 ⩽ x ⩽ 0.67) on (111) Si has been achieved by utilizing an intermediate Pd2Si layer. On annealing a deposited GeSi/Pd2Si/Si substrate sample in the temperature range 550–750 °C, the deposited GeSi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d6e8dedf23c05dcabbad2f7c573f32
https://doi.org/10.1016/0040-6090(93)90527-v
https://doi.org/10.1016/0040-6090(93)90527-v
Autor:
Q.Z. Hong, Li Jian, S. Mantl, S.S. Lau, J. W. Mayer, R. Butz, Bernhard Holländer, B. Zhu, C. Cozzolino, G. Vizkelethy, S.N. Hsu, W. Xia
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :989-993
Thermal interdiffusion in Si/Ge layered structures shows large variations in diffusivity between Si/Ge amorphous multilayer films and symmetrically strained superlattice structures. Amorphous layered structures exhibit much higher diffusivities and m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c27bdf569d500aadb46be00ea9c5fd00
https://doi.org/10.1016/0168-583x(91)95748-3
https://doi.org/10.1016/0168-583x(91)95748-3
Publikováno v:
IEEE Electron Device Letters. 19:151-153
A novel Ti self-aligned silicide (salicide) process using a combination of low dose molybdenum and preamorphization (PAI) implants and a single rapid-thermal-processing (RTP) step is presented, and shown to be the first Ti salicide process to achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8228f9018fe0d6c4b17f6c6059b7bd4
https://doi.org/10.1109/55.669732
https://doi.org/10.1109/55.669732
Autor:
Q.Z. Hong, Jorge A. Kittl, G.A. Dixit, P.P. Apte, Amitava Chatterjee, Ih-Chin Chen, Douglas A. Prinslow
Publikováno v:
Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bb433854cab42b966e5e2c4a56467ee
https://doi.org/10.1109/vtsa.1997.614719
https://doi.org/10.1109/vtsa.1997.614719
Publikováno v:
International Electron Devices Meeting. Technical Digest.
A high performance 1.5 V, sub-0.18 /spl mu/m (physical) gate length CMOS technology and extension to a 1.0 V technology for low power applications is described. nMOS with nominal I/sub drive/=740, 580, and 380 /spl mu/m are achieved for V/sub DD/=1.8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91307a1416959e961b425626326e9545
https://doi.org/10.1109/iedm.1996.554046
https://doi.org/10.1109/iedm.1996.554046
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :414-419
It is well established that strong correlations exist in thermal annealing and ion mixing. Recent investigations show pronounced differences between the two processes, even if the mixing is performed in the thermally activated regime. The growth kine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef1bb7b16891592a625753c806555d1b
https://doi.org/10.1016/0168-583x(89)90215-2
https://doi.org/10.1016/0168-583x(89)90215-2