Zobrazeno 1 - 10
of 425
pro vyhledávání: '"Q.X. Jia"'
Autor:
Jang Sik Lee, Q.X. Jia
Publikováno v:
Solid State Phenomena. :177-180
To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4f0ecd857ac3678e0df78cf64e798e
https://doi.org/10.4028/www.scientific.net/ssp.124-126.177
https://doi.org/10.4028/www.scientific.net/ssp.124-126.177
Publikováno v:
Polymer. 47:23-26
We report a simple method to synthesize Ag, Au, and Pt nanoparticles with a reasonable size dispersity using water-dispersible conducting polymer colloids composed of polyaniline (PANI) and conventional polyelectrolyte. This facile synthesis results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43cde25b197d7f348002db1e849f425c
https://doi.org/10.1016/j.polymer.2005.11.032
https://doi.org/10.1016/j.polymer.2005.11.032
Publikováno v:
Applied Surface Science. 219:199-202
Using layer-by-layer self-assembly technique, we have deposited multilayers of poly(diallydimethylammonium) (PDDA) and nickel phthalocyanine (NiPc) onto indium-tin-oxide (ITO) coated glass substrate. To determine how self-assembled multilayers affect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3ceaf781fd8e7f73d4077db22042fd3
https://doi.org/10.1016/s0169-4332(03)00540-3
https://doi.org/10.1016/s0169-4332(03)00540-3
Variable temperature scanning laser microscopy of wider width high temperature superconducting films
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 13:2611-2613
We have investigated the spatial distribution of resistive properties in 2 mm wide and 10 mm long epitaxial superconducting films using a variable temperature scanning laser microscopy (VTSLM). This technique measures ac voltage of bolometric respons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b460ca3db65c64039ee371fad2ee359
https://doi.org/10.1109/tasc.2003.811908
https://doi.org/10.1109/tasc.2003.811908
Akademický článek
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Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 53:472-473
Silicon-on-insulator (SOI) structures have been widely used in the semiconductor industry as substrates to grow various devices. They are usually prepared by a process called separation by implantation of oxygen (SIMOX). As an alternative, single cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cf24839d6a3a3ae223e8be57aa7d8b6
https://doi.org/10.1017/s0424820100138737
https://doi.org/10.1017/s0424820100138737
Akademický článek
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