Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Q.N. Abdullah"'
Publikováno v:
International Journal of Hydrogen Energy. 46:7000-7010
Nanostructured β-Ga2O3 nanobelts are fabricated by thermal evaporation method at a temperature around of 1120 °C. Subsequently, a sol-gel processed SnO2 layer is employed to coat β-Ga2O3 nanobelts. This simple deposition technique is confirmed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3383a62e8ecab6efba45cc21d74051fa
https://doi.org/10.1016/j.ijhydene.2020.11.109
https://doi.org/10.1016/j.ijhydene.2020.11.109
Autor:
M. Bououdina, Zainuriah Hassan, Q.N. Abdullah, Abdullah M. Ali, Fong Kwong Yam, Munirah Abdullah Almessiere, A.R. Ahmed
Publikováno v:
Superlattices and Microstructures. 117:92-104
This paper presents the investigation of the influence of the ammoniating time of GaN nanowires (NWs) on the crystalline structure, surface morphology, and optical characteristics. Morphological analysis indicates the growth of good quality and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::086d91e98ca94e7d2286810b7b4b51f0
https://doi.org/10.1016/j.spmi.2018.02.011
https://doi.org/10.1016/j.spmi.2018.02.011
Akademický článek
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Autor:
Zainuriah Hassan, Munirah Abdullah Almessiere, K.H. Mohmood, Amal L. Al-Otaibi, Q.N. Abdullah, M. Bououdina, S.A. Abdulateef, Fong Kwong Yam, M.A. Qaeed
Publikováno v:
Ceramics International. 42:13343-13349
Large-scale β-Ga 2 O 3 nanostructures (nanowires-NWs, nanobelts-NBs and nanosheets-NSs) were synthesized via thermal evaporation of GaN powder in an ambient argon atmosphere. The effect of the substrate type (Si, AlN-thin film/Si and ZnO-thin film/S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b9d72ca7aabd672870864b70870a886
https://doi.org/10.1016/j.ceramint.2016.04.165
https://doi.org/10.1016/j.ceramint.2016.04.165
Autor:
M.A. Qaeed, K.M.A. Saron, Kamarulazizi Ibrahim, Q.N. Abdullah, Nezar G. Elfadill, K.S.A. Aldroobi, Khaled M. Chahrour, A. Ismail, M.S. Mukhlif
Publikováno v:
Current Applied Physics. 15:499-503
This study involves the synthesis of gallium nitride (GaN) nanoparticles (NPs) under different low temperatures using a simple chemical method. The nanoparticles are spin coated on Si substrate to fabricate the solar cell. The FESEM images obtained i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f28036da5ae5d4aaa7049e9ee2a09c5
https://doi.org/10.1016/j.cap.2015.02.001
https://doi.org/10.1016/j.cap.2015.02.001
Publikováno v:
Sensors and Actuators B: Chemical. 204:497-506
In this work, the effect of NH 3 gas flow rate on the growth of GaN nanostructures deposited on c-plane Al 2 O 3 substrate by chemical vapor deposition, was examined. Field effect scanning electron microscopy images showed that the morphology of GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df594694662a38831db6a4f06c7115f3
https://doi.org/10.1016/j.snb.2014.07.112
https://doi.org/10.1016/j.snb.2014.07.112
Autor:
Zainuriah Hassan, Fong Kwong Yam, Q.N. Abdullah, K. Al-Heuseen, M.A. Qeed, Mohamed Bououdina, N.K. Hassan
Publikováno v:
Ceramics International. 40:9563-9569
Large-scale uniform one-dimensional (1D) GaN nanostructures have been successfully synthesized via the chemical vapor deposition method. The type of substrate was found to be a crucial factor in the synthesis of GaN, it affects the shape as well as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b79b090c0dbef9e6cccc3eb73a4a3a3
https://doi.org/10.1016/j.ceramint.2014.02.031
https://doi.org/10.1016/j.ceramint.2014.02.031
Publikováno v:
Advanced Materials Research. 925:450-454
In this paper, low-dimensional gallium nitride (GaN) nanowires have been successfully grown on silicon substrate through thermal chemical vapor deposition (TCVD); no metal catalyst was used to assist growth of nanostructure. A high purity of gallium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1702ed4cf74d3801d9089d7e97a422e
https://doi.org/10.4028/www.scientific.net/amr.925.450
https://doi.org/10.4028/www.scientific.net/amr.925.450
Autor:
Khaled M. Chahrour, K.M.A. Saron, Q.N. Abdullah, Nezar G. Elfadill, Saleh H. Abud, Kamarulazizi Ibrahim, M.A. Qaeed
Publikováno v:
Journal of Materials Science: Materials in Electronics. 25:1376-1380
This study involves the synthesise of indium nitride (InN) nanoparticles at low temperature using a chemical method. Three samples were synthesised under different times to produce InN nanoparticle of high quality crystallinity. Results showed that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f17b23fe071b936165d33dc4d85d5c2
https://doi.org/10.1007/s10854-014-1737-1
https://doi.org/10.1007/s10854-014-1737-1
Publikováno v:
International Journal of Hydrogen Energy. 38:14085-14101
Large-scale synthesis of GaN nanowires was grown on c -sapphire substrate by chemical vapor deposition technique. X-ray diffraction, field emission scanning electron microscopy, μ-Raman and μ-photoluminescence analyses reveal that GaN nanowires cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::494dc6586c0f01b06d086c49cdf718a7
https://doi.org/10.1016/j.ijhydene.2013.08.014
https://doi.org/10.1016/j.ijhydene.2013.08.014