Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Q. R. Hou"'
Publikováno v:
African Journal of Agricultural Research. 13:2881-2888
The feeding value of mulberry leaves for rabbits was quantitatively evaluated based on a single-factor design with five levels in diets (0, 5, 10, 15 and 20%). Results showed that rabbits given mulberry at 20 and 15% had a relatively lower body weigh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bfe731c078903153bcbe995c6bb8986
https://doi.org/10.5897/ajar2018.13551
https://doi.org/10.5897/ajar2018.13551
Publikováno v:
Materials Chemistry and Physics. 146:346-353
A good thermoelectric material should have a high Seebeck coefficient, a low electrical resistivity, and a low thermal conductivity. For conventional thermoelectric materials, however, increasing the Seebeck coefficient also leads to a simultaneous i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7147de743b5c1fe648c1c98770433e9d
https://doi.org/10.1016/j.matchemphys.2014.03.035
https://doi.org/10.1016/j.matchemphys.2014.03.035
Publikováno v:
Applied Physics A. 114:943-949
It is well known that aluminum (Al) and copper (Cu) are acceptor impurities with shallow- and deep-energy levels in silicon (Si), respectively. The thermoelectric power factor of Al and Cu codoped Si film is larger than that of only Al-doped Si film.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdf82ecbabf9e5f05e059bfbc4f426ad
https://doi.org/10.1007/s00339-013-7794-0
https://doi.org/10.1007/s00339-013-7794-0
Publikováno v:
International Journal of Minerals, Metallurgy, and Materials. 19:957-963
Aluminum-induced crystallized silicon films were prepared on glass substrates by magnetron sputtering. Aluminum was added in the silicon films intermittently by the regular pulse sputtering of an aluminum target. The amount of aluminum in the silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb5fe2cad26d4ea35d1cc10b12f41c4a
https://doi.org/10.1007/s12613-012-0654-7
https://doi.org/10.1007/s12613-012-0654-7
Publikováno v:
physica status solidi (a). 209:1307-1312
Silicon-added and modulation-doped higher manganese silicide (HMS, MnSi1.7) films have been prepared on glass substrates by magnetron-sputtering of MnSi1.85, Si, and Al targets. Silicon-addition and modulation-doping are used to enhance the Seebeck c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::452096d977447e5bbea2f20c515d3214
https://doi.org/10.1002/pssa.201127753
https://doi.org/10.1002/pssa.201127753
Publikováno v:
Nano. :481-487
The introduction of an un-doped silicon layer (spacer) enhances significantly the thermoelectric power factor in modulation-doped Si(Al)-MnSi1.7-Si(Al) sandwich structure. This un-doped silicon layer is inserted between the MnSi1.7 (HMS) and Al -dope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27a47dd67a04e2c1b3a40a65b1a8583d
https://doi.org/10.1142/s1793292011002809
https://doi.org/10.1142/s1793292011002809
Publikováno v:
Modern Physics Letters B. 25:1829-1838
Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::008925670d974e3389bc0cdbab936de9
https://doi.org/10.1142/s0217984911027078
https://doi.org/10.1142/s0217984911027078
Publikováno v:
International Journal of Modern Physics B. 25:2393-2402
MnSi 1.7 films with different thicknesses (16–242 nm) are prepared by magnetron sputtering and electron beam evaporation. When the MnSi 1.7 film thickness is about 40 nm or above, MnSi 1.7 films are p-type in the whole temperature range (300–700
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c77accaa615c5b06bbcb170a4aff478
https://doi.org/10.1142/s0217979211101594
https://doi.org/10.1142/s0217979211101594
Publikováno v:
Nano. :167-171
Nanocrystalline silicon carbide ( SiC ) thin films with 5 ~ 10 nm grain size, large Seebeck coefficient (-0.393 mV/K), and low electrical resistivity (3.2 ×10-4 Ohm-m) have been successfully prepared on oxidized silicon substrates by magnetron sputt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b63450cf044fdbc85c1d86b0a26cdd
https://doi.org/10.1142/s1793292011002494
https://doi.org/10.1142/s1793292011002494
Publikováno v:
Modern Physics Letters B. 24:2457-2463
Nano-scale Al -doped silicon films are prepared by magnetron sputtering. The amount of Al doped in the films is controlled by regulating the Al sputtering power and duration. With appropriate amount of Al , the Seebeck coefficient of the Si films at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c95488b01006bde13e5ffbcfbcdfa48
https://doi.org/10.1142/s0217984910024778
https://doi.org/10.1142/s0217984910024778