Electrical and optical localisation of leakage current and breakdown point in SiOC:H low-k dielectrics

Autor: Philippe Lentrein, Matthias Vidal-Dho, Q. Hubert, Pascal Fornara, Jean-Michel Moragues, Patrice Ray, Bernard Pelissier, Patrice Gonon

Publikováno v: 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. pp.1-4, ⟨10.1109/ICMTS48187.2020.9107909⟩

This paper presents a novel methodology to observe the leakage current origin in SiOC:H low-$\kappa$ intermetallic dielectric as well as a method to localise electrically the breakdown point in usual comb/serpentine/comb structures. Our results indic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb1d8bff7790288ec93dd1af810fd697
https://hal.univ-grenoble-alpes.fr/hal-02916807

Probing impact on pad moisture tightness: A challenge for pad size reduction

Autor: Patrice Gonon, Pascale Potard, Jean-Michel Mirabel, Jonathan Jacquot, Delphine Maury, Jean-Philippe Escales, Maxime Marchetti, Q. Hubert, Pascal Fornara, Olivier Pizzuto, Matthias Vidal-Dho, Philippe Delorme, Pascal Sallagoity, Jean-Michel Moragues, Ludovic Beauvisage

Publikováno v: Conf. on Microelectronic Test Structures (ICMTS)
Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp.176-179
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS)
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp 176-179

This paper underlines the damages induced by probing on narrow pads reliability of specifically designed test structures placed on dicing streets and indicates that probing during electrical test steps provokes detrimental cracks diving from the pass

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a3ee63e3a5c25ae9fef6997ba49f793
https://hal.univ-grenoble-alpes.fr/hal-02362746

All regimes mobility extraction using split C–V technique enhanced with charge-sheet model

Autor: François H. Julien, Q. Hubert, B. Rebuffat, L. Masoero, M. Carmona, J. Innocenti, P. Chiquet, Pascal Masson, L. Lopez

Publikováno v: Solid-State Electronics. 111:52-57

In this paper, carrier effective mobility is accurately extracted from weak to strong inversion and from ohmic to saturation regimes by pairing the split C – V technique with charge-sheet model. In weak inversion, both electron and hole effective m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ab7b54224f778d00e7fe57a2f4d4039
https://doi.org/10.1016/j.sse.2015.05.001

Assessment of Self-Induced Joule-Heating Effect in the $I$–$V$ Readout Region of Polycrystalline $\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5}$ Phase-Change Memory

Autor: L. Perniola, Q. Hubert, Paolo Pavan, G. B. Beneventi, A. Gliere, B. De Salvo, Luca Larcher

Publikováno v: IEEE Transactions on Electron Devices. 59:188-196

The physical mechanisms that regulate carrier transport in polycrystalline chalcogenides, such as Ge2Sb2Te5 (GST), are still debated. Recently, self-induced Joule-heating (SJH) effect has been claimed to be the key factor in explaining the nonlineari

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6fc7794f90042f0fe8854994f46b443c
https://doi.org/10.1109/ted.2011.2170840

Layout optimizations to decrease internal power and area in digital CMOS standard cells

Autor: Stephan Niel, Pascal Masson, Q. Hubert, Jacques Sonzogni, Arnaud Regnier, Franck Julien, J-M. Portal, L. Lopez, J. Innocenti

Publikováno v: MIPRO

This paper presents several layout optimizations in order to decrease both, the internal power and the area of digital standard cells. A new D flip-flop (Dff) is designed using advanced design rules and lower active widths. Post-layout simulations ar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::217f84f9c443d0c330239daa7a028195
https://doi.org/10.1109/mipro.2015.7160523