Zobrazeno 1 - 10
of 368
pro vyhledávání: '"Q F, Zhan"'
Autor:
T. Shang, J. Meng, X. Y. Zhu, H. Zhang, B. C. Yu, Z. X. Zhen, Y. H. Wang, Y. Xu, Q. F. Zhan, D. J. Gawryluk, T. Shiroka
Publikováno v:
Physical Review B. 107
We report a study of NiBi$_3$ single crystals by means of electrical-resistivity-, magnetization-, and muon-spin rotation and relaxation ($\mu$SR) measurements. As a single crystal, NiBi$_3$ adopts a needle-like shape and exhibits bulk superconductiv
Autor:
T. Shang, Y. Chen, W. Xie, D. J. Gawryluk, R. Gupta, R. Khasanov, X. Y. Zhu, H. Zhang, Z. X. Zhen, B. C. Yu, Z. Zhou, Y. Xu, Q. F. Zhan, E. Pomjakushina, H. Q. Yuan, T. Shiroka
Publikováno v:
Physical Review B. 106
Autor:
Y. Gao, B. You, H. L. Yang, Q. F. Zhan, Z. Li, N. Lei, W. S. Zhao, J. Wu, H. Q. Tu, J. Wang, L. J. Wei, W. Zhang, Y. B. Xu, J. Du
Publikováno v:
AIP Advances, Vol 6, Iss 12, Pp 125124-125124-7 (2016)
Stochastic phenomena in magnetic nanowires based on domain wall (DW) motion is scientifically important thus to understand and control such behaviors are very meaningful. Here we report on the investigation of pinning and depinning of DWs in permallo
Externí odkaz:
https://doaj.org/article/8463e72e3ac141a384b7b5bb1b1f4a36
Autor:
X. Y. Zhu, H. Zhang, D. J. Gawryluk, Z. X. Zhen, B. C. Yu, S. L. Ju, W. Xie, D. M. Jiang, W. J. Cheng, Y. Xu, M. Shi, E. Pomjakushina, Q. F. Zhan, T. Shiroka, T. Shang
Publikováno v:
Physical Review B. 105
Autor:
H, Zhang, X Y, Zhu, Y, Xu, D J, Gawryluk, W, Xie, S L, Ju, M, Shi, T, Shiroka, Q F, Zhan, E, Pomjakushina, T, Shang
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 34(3)
We report on systematic temperature- and magnetic field-dependent studies of the EuGa
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Autor:
Yang H; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China., Li S; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China., Wu Y; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China., Bao X; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Xiang Z; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China., Xie Y; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China., Pan L; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Chen J; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Liu Y; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China., Li RW; CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.; College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Sep; Vol. 36 (37), pp. e2311996. Date of Electronic Publication: 2024 May 29.
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