Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Pyungho Choi"'
Autor:
Hyojung Kim, Jongwoo Park, Sora Bak, Jungmin Park, Changwoo Byun, Changyong Oh, Bo Sung Kim, Chanhee Han, Jongmin Yoo, Dongbhin Kim, Jangkun Song, Pyungho Choi, Byoungdeog Choi
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract Flexible displays on a polyimide (PI) substrate are widely regarded as a promising next-generation display technology due to their versatility in various applications. Among other bendable materials used as display panel substrates, PI is es
Externí odkaz:
https://doaj.org/article/c4c6ba3e77ca44da8f624dbeb4fd4a2b
Autor:
Hyojung Kim, Soonkon Kim, Jongmin Yoo, Changyong Oh, Bosung Kim, Hyuncheol Hwang, Jungmin Park, Pyungho Choi, Jangkun Song, Kiju Im, Byoungdeog Choi
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035312-035312-5 (2021)
In this paper, the dependence of threshold voltage (Vth) changes to amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) under positive bias light illumination (PBIS) on the height of the conduction band offset was studied. Using
Externí odkaz:
https://doaj.org/article/0c99a7a58f9b4b879b3c4e2ccf27ad2c
Autor:
Sung Heo, Eunseog Cho, Hyung-Ik Lee, Gyeong Su Park, Hee Jae Kang, T. Nagatomi, Pyungho Choi, Byoung-Deog Choi
Publikováno v:
AIP Advances, Vol 5, Iss 7, Pp 077167-077167-8 (2015)
The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS) and high-energy resolution REELS (HR-REELS). HR-REELS with a primary electron energy of 0.3 keV revealed that the surface
Externí odkaz:
https://doaj.org/article/250371891a86484ebaceeec784459ef2
Autor:
Changwoo Byun, Sora Bak, Jongmin Yoo, Chanhee Han, Byoungdeog Choi, Hyo-Jung Kim, Jang-Kun Song, Jongwoo Park, Jungmin Park, Bo Sung Kim, Pyungho Choi, Changyong Oh, Dongbhin Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Scientific Reports
Scientific Reports
Flexible displays on a polyimide (PI) substrate are widely regarded as a promising next-generation display technology due to their versatility in various applications. Among other bendable materials used as display panel substrates, PI is especially
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:4277-4284
In this study, we investigated the threshold voltage (Vth) instability of solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) prior to and after negative bias illumination stress (NBIS) with varying carrier suppressors (Ga, Al, Hf
Autor:
Hyo Jung Kim, Byoungdeog Choi, Changyong Oh, Bosung Kim, Pyungho Choi, Jungmin Park, Bohyeon Jeon, Jongyoon Lee
Publikováno v:
Electronic Materials Letters. 17:299-306
This study investigated the electrical and stability characteristics of Al2O3 as a gate insulator, which was deposited by various atomic layer deposition methods in top-gate staggered amorphous InGaZnO (a-IGZO) thin film transistors. A trimethylalumi
Publikováno v:
Journal of Electrical Engineering & Technology. 16:1027-1033
This study investigates the effect of the gate SiO2 thickness (80, 100, and 130 nm) deposited by plasma enhanced chemical vapor deposition on the interface and reliability characteristics of low-temperature polycrystalline silicon thin film transisto
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:6638-6642
In this study, the effects of hydrogenation on the dielectric capacitance and leakage current of ZrO2/Al2O3/ZrO2 (ZAZ) films for dynamic-random-access memory (DRAM) capacitors were examined. Hydrogen permeation into ZAZ films reduced the dielectric c
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:6718-6722
Hafnium zirconium silicon oxide ((HfZrO4)1−x(SiO2)x) materials were investigated through the defect analysis and reliability characterization for next generation high-κ dielectric. Silicate doped hafnium zirconium oxide (HfZrO4) films showed a red
Autor:
Bohyeon Jeon, Pyungho Choi, Byoungdeog Choi, Kihwan Kim, Hyo Jung Kim, Junehwan Kim, Jong Woo Park, Minjun Song, Jang-Kun Song, Jungmin Park, Soonkon Kim
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 20:474-478
In this paper, we introduce a method enabling faster and more innovative analysis of the channel characteristics of amorphous indium-gallium- zinc oxide (a-IGZO) thin film transistors (TFTs) manufactured on flexible substrates through electrical prop