Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Puzyrnaya Galina"'
Autor:
Kuznetsova Alina, Dolgopolov Mikhail, Gurskaya Albina, Chepurnov Viktor, Puzyrnaya Galina, Radzhapov Sali
Publikováno v:
EPJ Web of Conferences, Vol 222, p 02013 (2019)
The endotaxia is the process of growth of one crystal structure inside the volume of another. In this case we are talking about the formation of the Silicon Carbide film in the Silicon substrate. The Silicon substrate is placed in the gas chamber. Th
Externí odkaz:
https://doaj.org/article/22ed259491684cfab4d15908b46a8ace
Autor:
Latukhina, Natalya, Rogozin, Anton, Puzyrnaya, Galina, Lizunkova, Darya, Gurtov, Aleksandr, Ivkov, Sergey
Publikováno v:
In Procedia Engineering 2015 104:157-161
Autor:
Melikhov, D., Volobuev, I., Kuznetsova, Alina, Dolgopolov, Mikhail, Gurskaya, Albina, Chepurnov, Viktor, Puzyrnaya, Galina, Radzhapov, Sali
Publikováno v:
EPJ Web of Conferences; 11/19/2019, Vol. 222, p1-5, 5p