Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Puyang Cai"'
Autor:
Zhiwei Liu, Puyang Cai, Songhai Yu, Linxin Han, Runsheng Wang, Yanqing Wu, Pengpeng Ren, Zhigang Ji, Ru Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 735-740 (2021)
Increasing demands for mass storage and new paradigm computing ask for non-volatile memories that can meet reliability requirements. Hf0.5Zr0.5O2-based (HZO) memory has attracted growing attention due to its excellent CMOS compatibility. This letter
Externí odkaz:
https://doaj.org/article/430902d35c67471d9662a8b843c43c74
Autor:
Ning Feng, Hao Li, Baokang Peng, Fangxing Zhang, Puyang Cai, Lining Zhang, Runsheng Wang, Ru Huang
Publikováno v:
IEEE Transactions on Electron Devices. 70:3382-3389
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63c457473740da1d3ba2dd4b3f0cc173
https://doi.org/10.1109/ted.2023.3269400
https://doi.org/10.1109/ted.2023.3269400
Autor:
Ning Feng, Hao Li, Lining Zhang, Ning Ji, Fangxi Zhang, Xiaobao Zhu, Zongwei Shang, Puyang Cai, Ming Li, Runsheng Wang, Ru Huang
Publikováno v:
IEEE Electron Device Letters. 44:261-264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1f4a7faaecf884a725dad88e4da05e8
https://doi.org/10.1109/led.2022.3233456
https://doi.org/10.1109/led.2022.3233456
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19caa06bc8d7292417b12f57d7bb6bfd
https://doi.org/10.1109/irps48203.2023.10118078
https://doi.org/10.1109/irps48203.2023.10118078
Autor:
Puyang Cai, Tianxiang Zhu, Jiahui Duan, Zixuan Sun, Hao Li, Yongkang Xue, Zhiwei Liu, Hao Xu, Liangliang Zhang, Xiaolei Wang, Zhigang Ji, Runsheng Wang, Ru Huang
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf3cac83614ac6e0fca1648fc27c81fa
https://doi.org/10.1109/iedm45625.2022.10019441
https://doi.org/10.1109/iedm45625.2022.10019441
Autor:
Yanqing Wu, Pengpeng Ren, Linxin Han, Ru Huang, Runsheng Wang, Zhigang Ji, Zhiwei Liu, Puyang Cai, Songhai Yu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 735-740 (2021)
Increasing demands for mass storage and new paradigm computing ask for non-volatile memories that can meet reliability requirements. Hf0.5Zr0.5O2-based (HZO) memory has attracted growing attention due to its excellent CMOS compatibility. This letter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47ce0d82958f2c57e88a8efa855f2670
https://ieeexplore.ieee.org/document/9509278/
https://ieeexplore.ieee.org/document/9509278/
Autor:
Puyang Cai, Hao Li, Zhiwei Liu, Tianxiang Zhu, Min Zeng, Zhigang Ji, Yanqing Wu, Andrea Padovani, Luca Larcher, Milan Pesic, Runsheng Wang, Ru Huang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a93b870cfad33f8e88056e0e005f756
https://hdl.handle.net/11380/1274802
https://hdl.handle.net/11380/1274802
Publikováno v:
Science China Information Sciences. 62
Two-dimensional layered materials (2DLMs) have triggered a broad researchthrust over the last decade worldwide. Different from the gapless graphene,transition metal dichalcogenides (TMDs) exhibit versatile bandstructure, withbandgap sizes ranging fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dc14409625f0a4c459d5d00493f6e28
https://doi.org/10.1007/s11432-019-2651-x
https://doi.org/10.1007/s11432-019-2651-x