Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Putu Andhita Dananjaya"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract We investigate the functionality of NbOx-based selector devices on a flexible substrate. It was observed that the failure mechanism of cyclic tensile strain is from the disruption of atom arrangements, which essentially led to the crack form
Externí odkaz:
https://doaj.org/article/81928df7282c431bb7de7ca0fe781e4c
Autor:
Jin-Lin Yang, Lingli Liu, Zehua Yu, Pengbo Chen, Jia Li, Putu Andhita Dananjaya, Eng Kang Koh, Wen Siang Lew, Kang Liu, Peihua Yang, Hong Jin Fan
Publikováno v:
ACS Energy Letters. 8:2042-2050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8c818547abaf358d24c0e5d16efdb09
https://doi.org/10.1021/acsenergylett.3c00367
https://doi.org/10.1021/acsenergylett.3c00367
Autor:
Guillermo C. Bazan, Shuai Chen, Kunqi Hou, Putu Andhita Dananjaya, Wei Lin Leong, Wen Siang Lew, Martial Duchamp, Linh Lan Nguyen, Cheng Zhou
Publikováno v:
Nano Letters. 21:9262-9269
Conductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63c3ff809ff4a0dbc927b8ce45c177c2
https://doi.org/10.1021/acs.nanolett.1c03180
https://doi.org/10.1021/acs.nanolett.1c03180
Publikováno v:
ACS applied materialsinterfaces. 14(31)
Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f57160b4ae4739a6c27cf8f1a31f6e0c
https://pubmed.ncbi.nlm.nih.gov/35892238
https://pubmed.ncbi.nlm.nih.gov/35892238
Autor:
Wen Siang Lew, Putu Andhita Dananjaya, Eng Huat Toh, Samuel C. W. Chow, Kuan Hong Tan, Desmond Jia Jun Loy, Somsubhra Chakrabarti
Publikováno v:
ACS Applied Electronic Materials. 2:3160-3170
We report a switching model that directly explains the change in activation energy (EAC) at different RESET stop voltages (Vstop) in HfO2-based resistive random access memory devices. The dependenc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::123a86bbb5bddba5a24ca214a219d68a
https://doi.org/10.1021/acsaelm.0c00515
https://doi.org/10.1021/acsaelm.0c00515
Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6945ad922276717f036d91f68f1db00
https://hdl.handle.net/10356/162672
https://hdl.handle.net/10356/162672
Autor:
Jia Min Ang, Putu Andhita Dananjaya, Samuel Chen Wai Chow, Gerard Joseph Lim, Chim Seng Seet, Wen Siang Lew
Publikováno v:
Nanotechnology. 34:185202
This work demonstrates oscillation frequency modulation in a NbO2-based relaxation oscillator device, in which the oscillation frequency increases with operating temperature and source voltage, and decreases with load resistance. An annealing-induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b64e150c22870e932d6c050a233bf4ea
https://doi.org/10.1088/1361-6528/acb778
https://doi.org/10.1088/1361-6528/acb778
Autor:
Samuel Chen Wai Chow, Putu Andhita Dananjaya, Jia Min Ang, Desmond Jia Jun Loy, Jia Rui Thong, Siew Wei Hoo, Eng Huat Toh, Wen Siang Lew
Publikováno v:
Applied Surface Science. 608:155233
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::646031d3c21e34abaaea1851e9b4b098
https://doi.org/10.1016/j.apsusc.2022.155233
https://doi.org/10.1016/j.apsusc.2022.155233
Autor:
Eng Huat Toh, Desmond Jia Jun Loy, Samuel Chen Wai Chow, Kunqi Hou, Wen Siang Lew, Somsubhra Chakrabarti, Mun Yin Chee, Kuan Hong Tan, Yong Chiang Ee, Gerard Joseph Lim, Jia Min Ang, Putu Andhita Dananjaya, Jia Rui Thong
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
A multi-level state HfO 2 -based resistive switching model is reported, where the increase in stopping voltage (V stop ) and thus activation energy (E AC ) is attributed to the depletion of oxygen vacancy (V o ) concentration (n c ) during reset. Hop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6aa34845712af4e51e99da3425e8bd
https://doi.org/10.1109/snw50361.2020.9131623
https://doi.org/10.1109/snw50361.2020.9131623