Ultra-High-kFerroelectric BaTiO3Perovskite in the Gate Stack for Two-Dimensional WSe2p-Type High-Performance Transistors

Autor: Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J., Maxey, Kirby, O’Brien, Kevin P., Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa Ekin, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B., Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A.

Publikováno v: Nano Letters; October 2024, Vol. 24 Issue: 40 p12353-12360, 8p

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Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors.

Autor: Debashis P; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Ryu H; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Steinhardt R; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Buragohain P; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Plombon JJ; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Maxey K; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., O'Brien KP; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Kim R; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Sen Gupta A; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Rogan C; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Lux J; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Tung IC; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Adams D; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Gulseren M; UC Davis, Davis, California 95616, United States., Verma Penumatcha A; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Shivaraman S; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Li H; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Zhong T; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Harlson S; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Tronic T; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Oni A; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Putna S; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Clendenning SB; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Metz M; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Radosavljevic M; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Avci U; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Young IA; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States.

Publikováno v: Nano letters [Nano Lett] 2024 Oct 09; Vol. 24 (40), pp. 12353-12360. Date of Electronic Publication: 2024 Oct 01.