Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Pushpa Raj Pudasaini"'
Publikováno v:
International Journal of Photoenergy, Vol 2017 (2017)
Externí odkaz:
https://doaj.org/article/915d1c5292d54620a57b8bbe46d1ebf0
Autor:
Cheng Zhang, Kai Xiao, Olga S. Ovchinnikova, Anthony T. Wong, Liubin Xu, Thomas Z. Ward, Pushpa Raj Pudasaini, Anton V. Ievlev, Joo Hyon Noh, David Mandrus, Amanda Haglund, Haixuan Xu, Akinola D. Oyedele, Philip D. Rack
Publikováno v:
ACS Applied Materials & Interfaces. 10:22623-22631
The formation of an electric double layer in ionic liquid (IL) can electrostatically induce charge carriers and/or intercalate ions in and out of the lattice which can trigger a large change of the electronic, optical, and magnetic properties of mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b91b7aeee4c0d9c6d108f987f1ff4016
https://doi.org/10.1021/acsami.8b05577
https://doi.org/10.1021/acsami.8b05577
Autor:
Shize Yang, Bobby G. Sumpter, Liangbo Liang, Akinola D. Oyedele, Peng Yu, Kai Wang, Christopher M. Rouleau, David B. Geohegan, Avik W. Ghosh, Philip D. Rack, Jingjie Zhang, Kai Xiao, Matthew F. Chisholm, Wu Zhou, Zheng Liu, Alexander A. Puretzky, Pushpa Raj Pudasaini
Publikováno v:
Journal of the American Chemical Society. 139:14090-14097
Most studied two-dimensional (2D) materials exhibit isotropic behavior due to high lattice symmetry; however, lower-symmetry 2D materials such as phosphorene and other elemental 2D materials exhibit very interesting anisotropic properties. In this wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b7c7f9a6cd22b4d83ce53118556fffe
https://doi.org/10.1021/jacs.7b04865
https://doi.org/10.1021/jacs.7b04865
Autor:
Thomas Z. Ward, Pushpa Raj Pudasaini, Gerd Duscher, David Mandrus, Kai Xiao, Anna N. Hoffman, Philip D. Rack, Akinola D. Oyedele, Anthony T. Wong, Cheng Zhang, Nicholas Cross, Michael G. Stanford
Publikováno v:
Nano Research. 11:722-730
In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6211379dc8eb347149748c929594ce36
https://doi.org/10.1007/s12274-017-1681-5
https://doi.org/10.1007/s12274-017-1681-5
Autor:
Harald Plank, Brett B. Lewis, Pushpa Raj Pudasaini, Robert Winkler, Xiahan Sang, Philip D. Rack, Raymond R. Unocic, Jason D. Fowlkes, Michael G. Stanford
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 801-812 (2017)
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 801-812 (2017)
We investigate the growth, purity, grain structure/morphology, and electrical resistivity of 3D platinum nanowires synthesized via electron beam induced deposition with and without an in situ pulsed laser assist process which photothermally couples t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::570ebe91cafaf8b52b49691dce3bbd3f
http://europepmc.org/articles/PMC5389181
http://europepmc.org/articles/PMC5389181
Autor:
Anthony T. Wong, Philip D. Rack, Amanda Haglund, Joo Hyon Noh, Pushpa Raj Pudasaini, David Mandrus, Thomas Z. Ward, Olga S. Ovchinnikova, Sheng Dai
Publikováno v:
Advanced Functional Materials. 26:2820-2825
Amorphous metal-oxide semiconductors offer the high carrier mobilities and excellent large-area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ea458149dd966c8e3e4c3712309337
https://doi.org/10.1002/adfm.201505274
https://doi.org/10.1002/adfm.201505274
Autor:
Sheng Dai, Joo Hyon Noh, Pushpa Raj Pudasaini, David Mandrus, Anthony T. Wong, Amanda Haglund, Philip D. Rack, Thomas Z. Ward
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:Q105-Q109
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c221d358e34f03549b9db3eb77180238
https://doi.org/10.1149/2.0141509jss
https://doi.org/10.1149/2.0141509jss
Autor:
Anthony T. Wong, M. B. Okatan, Wei Zhao, Jeremy Come, Sergei V. Kalinin, Joo Hyon Noh, Pushpa Raj Pudasaini, Pengfei Zhang, Sheng Bi, Sheng Dai, Nina Balke, Mengyang Zhu, Guang Feng, Jennifer Black, Thomas Z. Ward, Philip D. Rack
Publikováno v:
ACS applied materialsinterfaces. 9(46)
Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb214c31f453d2dbbcf22f01170fc797
https://pubmed.ncbi.nlm.nih.gov/29063758
https://pubmed.ncbi.nlm.nih.gov/29063758
Autor:
Yijing Stehle, Raymond R. Unocic, Pushpa Raj Pudasaini, Ivan Vlassiouk, Arthur P. Baddorf, Ksenia V. Bets, Nickolay V. Lavrik, Frederick Alyious List, Nitant Gupta, Sergei N. Smirnov, Ilia N. Ivanov, Philip D. Rack, Boris I. Yakobson
Publikováno v:
Nature materials. 17(4)
There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice 1 in preparing single-crystalline thin films, but it requires single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fde2cd786c86b7cbf01a45cd05f8c4d
https://pubmed.ncbi.nlm.nih.gov/29531371
https://pubmed.ncbi.nlm.nih.gov/29531371
Autor:
Pushpa Raj, Pudasaini, Michael G, Stanford, Akinola, Oyedele, Anthony T, Wong, Anna N, Hoffman, Dayrl P, Briggs, Kai, Xiao, David G, Mandrus, Thomas Z, Ward, Philip D, Rack
Publikováno v:
Nanotechnology. 28(47)
In this paper, high performance top-gated WSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::861e77df169e4b2cb4bedb0531f61dfe
https://pubmed.ncbi.nlm.nih.gov/28718775
https://pubmed.ncbi.nlm.nih.gov/28718775