Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Pushpa Mahalingam"'
Publikováno v:
Surface Science. 540:L623-L630
The mechanism and energetics are presented of the dimerization of two adsorbed surface SiH 2 groups on the H-terminated Si(0 0 1)-(2 × 1) surface to form Si 2 H 4 species during the initial stages of growth in plasma deposition of hydrogenated amorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ddf1c5efb1e4260db9f0458612eec8a
https://doi.org/10.1016/s0039-6028(03)00869-0
https://doi.org/10.1016/s0039-6028(03)00869-0
Publikováno v:
Scopus-Elsevier
Silylene (SiH2) radicals created by electron impact dissociation of silane in reactive gas discharges can play an important role in plasma deposition of amorphous and nanocrystalline silicon thin films. In this article, we present a systematic comput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f1209dc02f536beaf3ace36c0e7a532
https://doi.org/10.1063/1.371552
https://doi.org/10.1063/1.371552
Autor:
Pushpa Mahalingam, David S. Dandy
Publikováno v:
Thin Solid Films. 322:108-116
The chemistry of the intermediate layer that develops at the interface between diamond and a non-diamond substrate during diamond chemical vapor deposition is analyzed using a thermodynamic quasi-equilibrium model. Substrates of Si, Mo, W, Ti, Ta, Fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1712041242ddf6aa7af6eb285f2c70de
https://doi.org/10.1016/s0040-6090(97)00966-8
https://doi.org/10.1016/s0040-6090(97)00966-8
Autor:
Pushpa Mahalingam, David S. Dandy
Publikováno v:
Diamond and Related Materials. 6:1759-1771
The diamond chemical vapor deposition (CVD) process has been investigated theoretically and the morphological instabilities associated with the growth of diamond films have been examined with a model based on the continuum species conservation equati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33d59ded02bbdd145b0086d4b0c811dc
https://doi.org/10.1016/s0925-9635(97)80021-0
https://doi.org/10.1016/s0925-9635(97)80021-0
Publikováno v:
Journal of Applied Physics. 81:1966-1977
A theoretical study of the nucleation, size, and structure of diamond phase carbon clusters on Si(111) substrates is presented. Molecular mechanics analysis has been utilized to predict energetically and entropically feasible pathways for nucleation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d513fa679456112ccf4382732f29bde8
https://doi.org/10.1063/1.364053
https://doi.org/10.1063/1.364053
Extending analog design scaling to sub-wavelength lithography: co-optimization of RET and photomasks
Autor:
Kent G. Green, Siew Dorris, Ashesh Parikh, Craig West, Tom Smelko, John K. Arch, Peter Buck, Pushpa Mahalingam, Walter Walbrick, Vishal Garg
Publikováno v:
SPIE Proceedings.
The mask requirements for 110nm half-node BiCMOS process were analyzed with the goal to meet customer needs at lower cost and shorter cycle times. The key differentiating features for this technology were high density CMOS libraries along with high-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8214e35b53d7f2d15c7092c13df3576e
https://doi.org/10.1117/12.877487
https://doi.org/10.1117/12.877487
Autor:
Marshall O. Cathey, Pushpa Mahalingam, David C. Guiling, B. Robbins, Weidong Tian, Imran Khan
Publikováno v:
2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
A robust, reliable method of building high-precision MIM (metal-insulator-metal) capacitors with low Vcc, high matching performance and integrated in a 0.18um mixed signal process with sub- 0.35um metallization rules has been demonstrated. Top plate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee974a2fcc97296377226a3fafb86a38
https://doi.org/10.1109/asmc.2008.4529001
https://doi.org/10.1109/asmc.2008.4529001
Publikováno v:
2007 International Symposium on Semiconductor Manufacturing.
A robust and innovative method of fabrication of on-chip capacitive digital isolators integrated in a high precision analog CMOS process is presented in this paper. Several dielectric materials such as TEOS, HDP, silicon nitride, silicon oxynitride,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb8d426c9aa6cdecfe7a3b911fea9b72
https://doi.org/10.1109/issm.2007.4446870
https://doi.org/10.1109/issm.2007.4446870
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
In this paper, we report detailed studies on process challenges and solutions when super-thick gate DECMOS and thin gate CMOS are integrated together in 0deg on-axis substrate. It has been found that large intra-wafer VT variation (sigma ~ 90 mV) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd0cdc902b766e2ffd26749f5cb3cd2
https://doi.org/10.1109/issm.2006.4493130
https://doi.org/10.1109/issm.2006.4493130
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:183
Choice of substrate used for analog complementary metal-oxide-semiconductor (CMOS) technologies impacts device performance and fabrication yields significantly. This study examines the impact of low-angle (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faa093f15c6450c9254415d24f287756
https://doi.org/10.1116/1.2406063
https://doi.org/10.1116/1.2406063