Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Pushkara Rao Varanasi"'
Autor:
Kevin O'Shea, Yoshihiro Yamamoto, Jin Wuk Sung, Libor Vyklicky, Pushkara Rao Varanasi, George G. Barclay, Irene Popova, James F. Cameron, Jason A. DeSISTO, Manabu Hidano, Johan Amara, David Valeri, Vaishali R. Vohra, Greg Prokopowicz, Adam Ware, Tomoki Kurihara, Kathleen M. O'Connell, Wu-Song Huang
Publikováno v:
Journal of Photopolymer Science and Technology. 22:17-24
A new family of materials has been developed to serve as a wet-developable bottom antireflective coating (D-BARC) for patterning levels that have a strong need to avoid dry-etch processes for BARC-open steps. Such include some implant levels, where d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c1c025ab30f31631633756506e17c2
https://doi.org/10.2494/photopolymer.22.17
https://doi.org/10.2494/photopolymer.22.17
Autor:
Pushkara Rao Varanasi, Jayaraman Chandrasekhar, Irishi N. N. Namboothiri, A. Rathna, Alex K.-Y. Jen
Publikováno v:
Journal of the American Chemical Society. 118:12443-12448
First hyperpolarizabilities of a large number of push−pull substituted conjugated systems with heteroaromatic spacers have been calculated. The static, nonresonant components were computed at the ab initio level (4-31G basis) using the coupled pert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0697c0f46ad06febae0716fb5e3153ab
https://doi.org/10.1021/ja960136q
https://doi.org/10.1021/ja960136q
Autor:
James F. Cameron, Hiroaki Kitaguchi, Jin Wuk Sung, Irene Popova, Adam Ware, Pushkara Rao Varanasi, Sabrina Wong, Yoshihiro Yamamoto, Ranee Kwong, S. Holmes, Libor Vyklicky
Publikováno v:
SPIE Proceedings.
As patterning of implant layers becomes increasingly challenging it is clear that the standard resist/Top Antireflective Coating (TARC) process may be soon be limited in terms of its ability to meet implant targets at future nodes. A particularly att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e1a26acd39607b5ab584ab24445d2c1
https://doi.org/10.1117/12.881614
https://doi.org/10.1117/12.881614
Autor:
Jin Wuk Sung, Pushkara Rao Varanasi, Hiroaki Kitaguchi, James F. Cameron, Kevin O'Shea, Yoshihiro Yamamoto, Adam Ware, Irene Popova, John P. Amara, Libor Vyklicky, David Valeri
Publikováno v:
SPIE Proceedings.
As device scaling continues according to Moore's Law, an ongoing theme in the semiconductor industry is the need for robust patterning solutions for advanced device manufacture. One particularly attractive solution for implant lithography is the use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb16a1c3ddd6cd3636af002a47ced28
https://doi.org/10.1117/12.846708
https://doi.org/10.1117/12.846708
Publikováno v:
SPIE Proceedings.
Photoacid generators (PAGs) are a key component in chemically amplified resists used in photolithography. Perfluorooctanesulfonates (PFOS) and other perfluoroalkylsulfonates (PFAS) have been well adopted as PAGs in 193 nm photoresist. Recently, conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::568980e1927ce23f35df8acd3f96a7a4
https://doi.org/10.1117/12.846600
https://doi.org/10.1117/12.846600
Autor:
Jin Wuk Sung, James F. Cameron, Gregory P. Prokopowicz, Irene Popova, Yoshihiro Yamamoto, Pushkara Rao Varanasi, Adam Ware, Wu-Song Huang, Tomoki Kurihara, John P. Amara, Libor Vyklicky, Kevin O'Shea, David Valeri
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
Developable bottom anti-reflective coating (DBARC) technology holds promise in two main areas of lithography. The first application of DBARC is in implant lithography where patterning implant levels would greatly benefit from improved reflection cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a7d73305d9579124ea64fa11eb660bf
https://doi.org/10.1117/12.814421
https://doi.org/10.1117/12.814421
Autor:
Phillip J. Brock, Mahmoud Khojasteh, Irene Popova, Wu-Song Huang, Richard Anthony DiPietro, Rex Chen, Pushkara Rao Varanasi, Luisa D. Bozano, Ratnam Sooriyakumaran, Hoa Truong, Robert D. Allen
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
We report here, new non-acetal containing low bake (PEB < 100° C ) resists that are suitable for immersion lithography. These resists are based on novel low activation energy (low-E a ) tertiary ester protecting groups. One major obstacle to imaging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00c33eacba5037846b22c4ff5b3ce844
https://doi.org/10.1117/12.772947
https://doi.org/10.1117/12.772947
Publikováno v:
SPIE Proceedings.
Reflectivity caused by topography on wafer stacks is very difficult to reduce with the use of thin antireflective bottom layers. A coating of top antireflective layer, with 1/4n wavelength of exposure source (193nm in this case), will create destruct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604fc2b7b0d4fd0088bae2170bbcb9da
https://doi.org/10.1117/12.656641
https://doi.org/10.1117/12.656641
Autor:
Phillip J. Brock, Kaushal Patel, Margaret C. Lawson, Takashi Chiba, Pushkara Rao Varanasi, Gregory M. Wallraff, Yukio Nishimura, David R. Medeiros, Mark Slezak, Richard Anthony DiPietro
Publikováno v:
SPIE Proceedings.
It has been previously proposed that negative-tone resist process would have an intrinsic advantage for printing narrow trench geometry. To demonstrate this for 193nm lithography, a negative resist with performance comparable to a leading positive re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c283b1895778e1b22185be022d36e6c
https://doi.org/10.1117/12.536874
https://doi.org/10.1117/12.536874
Autor:
Eric F. Connor, Kaushal Patel, Thomas I. Wallow, Linda K. Sundberg, Phillip J. Brock, Gregory Breyta, Pushkara Rao Varanasi, Robert D. Allen, Blake Davis, Carl E. Larson, Ratnam Sooriyakumaran, Richard Anthony DiPietro
Publikováno v:
SPIE Proceedings.
Development of 193-nm negative resists that meet the stringent performance requirements of sub-100 nm resolution with conventional 0.26 N TMAH developer has proven to be a significant challenge. Most of the systems that are currently under developmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ead371b1a000ec2d9ad9ec23ecc88fff
https://doi.org/10.1117/12.536432
https://doi.org/10.1117/12.536432