Optimization of germanium fotodetector structures with an amorphous boron layer

Autor: Marković, Lovro

Rad donosi analizu postojećih poluvodičkih tehnologija detekcije čestica i elektromagnetskog zračenja. Analizirane su karakteristike materijala pogodne za izgradnju specifičnih detektora (UV, IR, elektroni). Također, ispitane su i modelirane po

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::71956182857035fc9650c3f16fed2a8e
https://repozitorij.fer.unizg.hr/islandora/object/fer:8003

PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility

Autor: Antonius A.I. Aarnink, Shivakumar D. Thammaiah, Kevin M. Batenburg, Lis K. Nanver, Tihomir Knežević, Xingyu Liu

Publikováno v: Thammaiah, S, Liu, X, Knežević, T, M. Batenburg, K, Aarnink, A A I & Nanver, L K 2021, ' PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility ', Elsevier, vol. 177, 107938 . https://doi.org/10.1016/j.sse.2020.107938
Solid-state electronics, 177:107938. Elsevier

Several methods of depositing pure boron (PureB) layers on silicon are examined with respect to their potential for fabricating advanced PureB (photo)diodes with back-end-of-line (BEOL) CMOS compatibility. PureB devices were fabricated in two differe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a80d319c46866c4d5dbb7e326b9be20e
https://vbn.aau.dk/da/publications/e17ea48b-ea95-4ab9-86b5-fb2e1eec0729

Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers

Autor: Kneževic, Tihomir, Suligoj, Tomislav, Nanver, Lis K., Skala, Karolj, Car, Zeljka, Pale, Predrag, Huljenic, Darko, Janjic, Matej, Koricic, Marko, Sruk, Vlado, Ribaric, Slobodan, Grbac, Tihana Galinac, Butkovic, Zeljko, Cicin-Sain, Marina, Skvorc, Dejan, Mauher, Mladen, Babic, Snjezana, Gros, Stjepan, Vrdoljak, Boris, Tijan, Edvard

Publikováno v: MIPRO
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019-Proceedings, 24-29
STARTPAGE=24;ENDPAGE=29;TITLE=2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019-Proceedings

Pure amorphous boron (PureB) deposition on Si is used to fabricate ultrashallow low- saturation-current p+n-like diodes even at process temperatures where the boron is not expected to diffuse into the bulk Si. It has been proposed that the bonding of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cf6d1b2361624709a111342b37d2c3c
https://doi.org/10.23919/mipro.2019.8757156

Diode design for studying material defect distributions with avalanche-mode light emission

Autor: Max Krakers, K.M. Batenburg, Lis K. Nanver, Tihomir Knezevic, Xingyu Liu

Publikováno v: 2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020-Proceedings

Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact po

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdfc98e2211ef8263ae786a7cc17e58b
https://research.utwente.nl/en/publications/dc359f13-021e-4a97-859a-b4694df0f6fb

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