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Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers

Publikováno v: 2023 35th International Conference on Microelectronic Test Structure (ICMTS)

In silicon technology, Schottky diodes mainly exhibit high current levels, and attempts are regularly made to reduce these by introducing 2D layers between the metal contact and the silicon. Defects in such interfacial layers, from weakly bonded stru

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e18da5c17501dfb2c8d46b5147186730
https://research.utwente.nl/en/publications/880791d1-b882-4fa1-9bef-5bbd1a3b43af

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Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents

Autor: Ivana Capan, Lis K. Nanver, Tomislav Suligoj, Tihomir Knezevic

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 68(6), 2810-2817. IEEE

Pure boron (PureB) deposition as the anode region of Si photodiodes creates negative fixed charge at the boron/silicon interface, which is responsible for effective suppression of electron injection from the bulk, thus ensuring low saturation/dark cu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e6872be007d1859f40d9de6e0f94b52
https://doi.org/10.1109/ted.2021.3074117

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Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Autor: Erwin Hardeveld, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Tihomir Knezevic

Publikováno v: IEEE electron device letters, 40(6):8686173, 858-861. IEEE

A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6372318a1550437214f8376f13699cc5
https://doi.org/10.1109/led.2019.2910465

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On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology

Autor: Xingyu Liu, Max Krakers, Tihomir Knezevic, Shivakumar D. Thammaiah, Lis K. Nanver

Publikováno v: Journal of nanoscience and nanotechnology, 21(4), 2472-2482. American Scientific Publishers

An overview is given of the many applications that nm-thin pure boron (PureB) layers can have when deposited on semiconductors such as Si, Ge, and GaN. The application that has been researched in most detail is the fabrication of nm-shallow p+n-like

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b19bf441bb71369719f8dadb75bfd03
https://www.bib.irb.hr/1089666

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Nanolayer boron-semiconductor interfaces and their device applications

Autor: Lin Qi, Xingyu Liu, Tihomir Knežević, Lis K. Nanver

Publikováno v: Solid-state electronics, 186:108041. Elsevier

Nanolayers of pure boron (PureB) deposited on Si form p+-type regions at deposition temperatures from 50 °C to 700 °C. At 700 °C, commercial PureB photodiodes are produced for advanced detection systems including those in extreme-ultraviolet (EUV)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9c7b1df73f213b5ac3eeacbd2d15af7
http://www.scopus.com/inward/record.url?scp=85108608156&partnerID=8YFLogxK

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Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range

Autor: Knezević, Tihomir, Krakers, Max, Nanver, Lis K., Jiang, Shibin, Digonnet, Michel J. F.

Publikováno v: Optical Components and Materials XVII

Optical characterization of PureGaB germanium- on-silicon (Ge-on-Si) photodiodes was performed for wavelengths between 255 nm and 1550 nm. In PureGaB technology, chemical vapor deposition is used to grow germanium islands in oxide windows to the sili

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::804648680070d15607bd831447424479
https://research.utwente.nl/en/publications/1dcc1c91-47d6-4df8-84ed-7ab1d59c7f8c

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PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility

Autor: Antonius A.I. Aarnink, Shivakumar D. Thammaiah, Kevin M. Batenburg, Lis K. Nanver, Tihomir Knežević, Xingyu Liu

Publikováno v: Thammaiah, S, Liu, X, Knežević, T, M. Batenburg, K, Aarnink, A A I & Nanver, L K 2021, ' PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility ', Elsevier, vol. 177, 107938 . https://doi.org/10.1016/j.sse.2020.107938
Solid-state electronics, 177:107938. Elsevier

Several methods of depositing pure boron (PureB) layers on silicon are examined with respect to their potential for fabricating advanced PureB (photo)diodes with back-end-of-line (BEOL) CMOS compatibility. PureB devices were fabricated in two differe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a80d319c46866c4d5dbb7e326b9be20e
https://vbn.aau.dk/da/publications/e17ea48b-ea95-4ab9-86b5-fb2e1eec0729

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Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Autor: Knežević, Tihomir, Nanver, Lis K., Suligoj, Tomislav, Osinski, Marek, Witzigmann, Bernd, Arakawa, Yasuhiko

Publikováno v: Physics and Simulation of Optoelectronic Devices XXVII, 10912

PureB single-photon avalanche diodes (SPADs) were investigated with the aid of a newly developed TCAD-based numerical modeling method with which characteristics related to the avalanching behavior can be simulated. The p + region forming the anode of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f68d390afff13cd36191e74e5609fc95
https://doi.org/10.1117/12.2508829

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