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pro vyhledávání: '"Puchalapalli, Dinesh Sankar Reddy"'
Autor:
Sounderarajan, Sathieesh, Seenivasan, Harshitha, Velayudhaperumal Chellam, Padmanaban, Puchalapalli, Dinesh Sankar Reddy, Ayothiraman, Seenivasan
Publikováno v:
In International Journal of Biological Macromolecules October 2024 277 Part 2
Autor:
Sounderarajan, Sathieesh, Karuppusamy, Kanakalakshmi, Vikram Surya, Aafreen Periyar, Puchalapalli, Dinesh Sankar Reddy, Sethi, Gautam, Ayothiraman, Seenivasan
Publikováno v:
In Process Biochemistry September 2024 144:20-37
Publikováno v:
Annals of Phytomedicine: An International Journal. 11
Akademický článek
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Autor:
Purohitam Narasimha Siva Teja, Santhosh Kumar Gugulothu, Puchalapalli Dinesh Sankar Reddy, Balakrishnan Deepanraj
Publikováno v:
Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering. :095440892211276
With the recent trends in the manufacturing techniques of semiconductor chips, the compactness of electronic devices is getting improved. Though the computational speed is improved extensively, overcoming the heat dissipation remained the most challe
Autor:
Sang Woo Joo, Ashutosh Sharma, Puchalapalli Dinesh Sankar Reddy, Dipankar Bandyopadhyay, Lin Xu
Publikováno v:
SCIENTIFIC REPORTS(7)
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Scientific Reports
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
A ‘giant’ slip dynamics was engineered to a highly confined interface of a dewetting polymethylmethacrylate (PMMA) ultrathin film by introducing a lubricating viscous polystyrene (PS) sublayer. The crossover of regimes from no-slip to giant-slip
Autor:
Puchalapalli Dinesh Sankar Reddy, Sang W. Joo, Dipankar Bandyopadhyay, Bahni Ray, Shizhi Qian, Gautam Biswas, Ashutosh Sharma
Publikováno v:
ELECTROPHORESIS. 32:3257-3267
We consider the stability of a thin liquid film with a free charged surface resting on a solid charged substrate by performing a general Orr-Sommerfeld (O-S) analysis complemented by a long-wave (LW) analysis. An externally applied field generates an