Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Przemyslaw Wisniewski"'
Autor:
Michał Leszczyński, Przemyslaw Wisniewski, Stephen P. Najda, Tadeusz Suski, P. Perlin, L. Marona, Dario Schiavon, S. Stanczyk, Szymon Grzanka
Publikováno v:
Emerging Imaging and Sensing Technologies for Security and Defence III; and Unmanned Sensors, Systems, and Countermeasures.
Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for defence applications such as next generation navigation, gravity mapping and timing
Autor:
P. Kruszewski, Grzegorz Cywiński, Pawel Prystawko, I. Yahniuk, J. Przybytek, Grigory Simin, Sergey Rumyantsev, Przemyslaw Wisniewski, K. Nowakowski-Szkudlarek, Wojciech Knap, Bartosz Grzywacz, A. Khachapuridze, P. Sai, Bartłomiej Stonio
Publikováno v:
2018 22nd International Microwave and Radar Conference (MIKON).
We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer
Publikováno v:
Gallium Nitride Materials and Devices XIII.
The linewidth of the luminescence should be the reflection of the system disorder, and the natural way of thinking is to associate this disorder with local variation of In composition and/or quantum wells thickness. Problem of the emission linewidth
Autor:
Przemyslaw Wisniewski, Szymon Grzanka, Krzysztof Gibasiewicz, Michał Leszczyński, S. P. Najda, Robert Czernecki, L. Marona, Piotr Perlin, S. Stanczyk, Tadeusz Suski, Dario Schiavon, Anna Kafar
Publikováno v:
Quantum Information Science and Technology III.
The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from UV, ~380 nm, to the visible ~530 nm, by tuning the indium content of the laser GaInN quantum well. This makes nitride laser diodes suitabl
Autor:
S. Stanczyk, Robert Czernecki, Michał Leszczyński, Tadeusz Suski, Przemyslaw Wisniewski, P. Perlin, Dario Schiavon, Stephen P. Najda, L. Marona
Publikováno v:
SPIE Proceedings.
GaN laser diodes fabricated from the AlGaInN material system is an emerging technology for high power, optical integration and quantum applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavele
Autor:
Lucja Marona, Dorota Pierscinska, Przemyslaw Wisniewski, Maciej Bugajski, Piotr Perlin, Kamil Pierscinski
Publikováno v:
Gallium Nitride Materials and Devices XII.
Investigation of temperature distribution on the facet of the device, with high spatial and temperature resolution, is crucial to gain insight into thermally activated degradation modes in GaN-based lasers. This work undertakes the problem of tempera
Autor:
Michał Leszczyński, S. Stanczyk, C. Carson, S. P. Najda, L. Marona, Grzegorz Targowski, Robert Czernecki, P. Perlin, Tadeusz Suski, D. Stothard, L. J. McKnight, Przemyslaw Wisniewski
Publikováno v:
SPIE Proceedings.
Optical clocks have demonstrated an improvement in temporal accuracy of several orders of magnitude over existing time standards based on caesium. Such systems hold great promise in many industrial sectors including financial time stamping, GPS-free
Autor:
Henry White, Piotr Perlin, Scott Watson, L. Marona, Przemyslaw Wisniewski, Giovanni Giuliano, Grzegorz Targowski, M. A. Watson, Michał Leszczyński, Leslie Charles Laycock, Anthony Kelly, Shaun Viola, Duncan Rowe, S. P. Najda, Robert Czernecki, Tadeusz Suski
Publikováno v:
SPIE Proceedings.
GaN-based laser diodes have been developed over the last 20 years making them desirable for many security and defence applications, in particular, free space laser communications. Unlike their LED counterparts, laser diodes are not limited by their c
Autor:
L. Marona, Tadeusz Suski, Przemyslaw Wisniewski, M. Boćkowski, P. Perlin, Grzegorz Targowski, Michał Leszczyński, Scott Watson, S. P. Najda, Robert Czernecki, Anthony Kelly, Robert Kucharski
Publikováno v:
SPIE Proceedings.
Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication. Conventional underwater communication is done acoustically with very slow data
Autor:
Tadeusz Suski, L. Marona, Grzegorz Targowski, P. Perlin, S. P. Najda, Michał Leszczyński, M. Boćkowski, Robert Czernecki, Robert Kucharski, Przemyslaw Wisniewski
Publikováno v:
Laser Technology for Defense and Security XII.
Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to