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pro vyhledávání: '"Pryor, Craig E."'
Autor:
van Venrooij, N. R. S., da Cruz, A. R., Gajjella, R. S. R., Koenraad, P. M., Pryor, Craig E., Flatté, Michael E.
We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly different origi
Externí odkaz:
http://arxiv.org/abs/2309.15062
Akademický článek
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Autor:
De, Amrit, Pryor, Craig E.
Crystalline semiconductors may exist in different polytypic phases with significantly different electronic and optical properties. In this paper, we calculate the electronic structure and optical properties of diamond, Si and Ge in the lonsdaleite (h
Externí odkaz:
http://arxiv.org/abs/1210.7392
The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequen
Externí odkaz:
http://arxiv.org/abs/1011.5014
Autor:
De, Amrit, Pryor, Craig E.
Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent. One co
Externí odkaz:
http://arxiv.org/abs/1011.3081
Autor:
De, Amrit, Pryor, Craig E.
While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzi
Externí odkaz:
http://arxiv.org/abs/0908.1984
An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of
Externí odkaz:
http://arxiv.org/abs/0808.0208
Publikováno v:
Appl. Phys. Lett. 92, 222502 (2008)
We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic elec
Externí odkaz:
http://arxiv.org/abs/0803.0708
Autor:
Pryor, Craig E., Flatté, Michael E.
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and confinement ene
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410678
Akademický článek
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