Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Prujszczyk, M."'
Autor:
Misiuk, A., Bak-Misiuk, J., Barcz, A., Romanowski, P., Tyschenko, I., Ulyashin, A., Prujszczyk, M.
Publikováno v:
In Applied Surface Science 1 November 2012 260:54-58
Autor:
Misiuk, A., Bak-Misiuk, J., Jung, W., Felba, J., Wierzchowski, W., Wieteska, K., Prujszczyk, M.
Publikováno v:
In Radiation Measurements 2010 45(3):624-627
Autor:
Misiuk, A., Wierzchowski, W., Surma, B., Wnuk, A., Bak-Misiuk, J., Wieteska, K., Barcz, A., Andrianakis, A., Londos, C.A., Yang, D., Prujszczyk, M., Graeff, W.
Publikováno v:
In Radiation Physics and Chemistry 2009 78(10) Supplement:S64-S66
Autor:
Misiuk, A., Wierzchowski, W., Wieteska, K., Romanowski, P., Bak-Misiuk, J., Prujszczyk, M., Londos, C.A., Graeff, W.
Publikováno v:
In Radiation Physics and Chemistry 2009 78(10) Supplement:S67-S70
Autor:
Misiuk, A., Abrosimov, N.V., Romanowski, P., Bak-Misiuk, J., Wnuk, A., Surma, B., Wierzchowski, W., Wieteska, K., Graeff, W., Prujszczyk, M.
Publikováno v:
In Materials Science & Engineering B 2008 154:137-140
Autor:
Misiuk, A., Surma, B., Bak-Misiuk, J., Londos, C.A., Vagovič, P., Kovacevic, I., Pivac, B., Jung, W., Prujszczyk, M.
Publikováno v:
In Radiation Measurements 2007 42(4):688-692
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B December 2006 253(1-2):205-209
Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up to 1570 K, including
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::44dc3c1bb12dd20971bd664b6e8d7e93
http://dspace.nbuv.gov.ua/handle/123456789/118217
http://dspace.nbuv.gov.ua/handle/123456789/118217
Deuterium is accumulated by defects in nitrogen-implanted silicon (Si:N). This effect is investigated for Si:N processed at HT ≤ 1400 K, also under enhanced hydrostatic pressure, HP ≤ 1.1 GPa. Si:N was prepared from Czochralski grown silicon by N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::738b0ed6ca5100bbde81b197d27e1ebd
http://dspace.nbuv.gov.ua/handle/123456789/69328
http://dspace.nbuv.gov.ua/handle/123456789/69328
Defect structure of Czochralski grown (1 1 1) oriented silicon single crystals (Cz-Si), irradiated with fast neutrons (energy 5 MeV, dose 5×1016 cm-2) and annealed at up to 1400 K, also under hydrostatic Ar pressure equal to 1.1 GPa, has been invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::67019b6930bc790c50e913bddab319d1
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3074003
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3074003