Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Provakar Mondol"'
Autor:
Hassan M Al-Emran, Fazlur Rahman, Laxmi Sarkar, Prosanto Kumar Das, Provakar Mondol, Suriya Yesmin, Pipasha Sultana, Toukir Ahammed, Rasel Parvez, Md Shazid Hasan, Shovon Lal Sarkar, M Shaminur Rahman, Anamica Hossain, Mahmudur Rahman, Ovinu Kibria Islam, Md Tanvir Islam, Shireen Nigar, Selina Akter, A S M Rubayet Ul Alam, Mohammad Mahfuzur Rahman, Iqbal Kabir Jahid, M Anwar Hossain
Publikováno v:
Bioinformatics and Biology Insights, Vol 18 (2024)
Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) that emerged in late 2019 has accumulated a series of point mutations and evolved into several variants of concern (VOCs), some of which are more transmissible and potentially more severe t
Externí odkaz:
https://doaj.org/article/d0d78047b7004b3ea5e87aaec2ee74a6
Autor:
Hassan M. Al-Emran, Fazlur Rahman, Laxmi Sarkar, Prosanto Kumar Das, Provakar Mondol, Suriya Yesmin, Pipasha Sultana, Toukir Ahammed, Rasel Parvez, Md Shazid Hasan, Shovon Lal Sarkar, M. Shaminur Rahman, Anamica Hossain, Mahmudur Rahman, Ovinu Kibria Islam, Md. Tanvir Islam, Shireen Nigar, Selina Akter, ASM Rubayet Ul Alam, Mohammad Mahfuzur Rahman, Iqbal Kabir Jahid, Md. Anwar Hossain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9852e7f8dbc3c5fa463e0881d2312752
https://doi.org/10.2139/ssrn.4401701
https://doi.org/10.2139/ssrn.4401701
Publikováno v:
2016 9th International Conference on Electrical and Computer Engineering (ICECE).
Advances in short channel transistor technology has allowed the emergence of these devices in modern chips. These transistors experience many different types of Short Channel Effects (SCE) that are addressed in this work. Using TCAD simulations, we r
Publikováno v:
2016 19th International Conference on Computer and Information Technology (ICCIT).
Advances in technology has allowed us to demand for high speed and low power devices in modern chips. These transistors are scaled down and examined with multi-gate architecture in order to improve electrostatic control over the channel and reduce po