Effect of the AIN nucleation layer growth on AlN material quality

Autor: Reentilä, O., Brunner, F., Knauer, A., Mogilatenko, A., Neumann, W., Protzmann, H., Heuken, M., Kneissl, M., Weyers, M., Tränkle, G.

Publikováno v: In Journal of Crystal Growth 2008 310(23):4932-4934

Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

Autor: Dauelsberg, M., Martin, C., Protzmann, H., Boyd, A.R., Thrush, E.J., Käppeler, J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.

Publikováno v: In Journal of Crystal Growth 2007 298:418-424

Uniformity control of group-III nitrides grown on 5×3 inch Al 2O 3 substrates inch Planetary Reactors ®

Autor: Protzmann, H, Luenenbuerger, M, Bremser, M, Heuken, M ^*, Juergensen, H

Publikováno v: In Journal of Crystal Growth 2000 221(1):629-634

Eine Mänade des Skopas im Albertinum in Dresden

Autor: Protzmann, H.

Publikováno v: Antike Welt, 1981 Jan 01. 12(4), 34-38.

Externí odkaz: https://www.jstor.org/stable/44431783

Reactive ion etching of GaN : results and morphology

Autor: Karouta, F., Vreugdewater, P., Kaufmann, L.M.F., Schön, O., Protzmann, H., Heuken, M.

Publikováno v: Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998, 169-172
STARTPAGE=169;ENDPAGE=172;TITLE=Proc. 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, INTEC, Gent, Belgium, 26 November 1998

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::010f28056c6e306bdef22a880a584e43
https://research.tue.nl/nl/publications/9852c609-b81f-403f-8992-b43ac9d6bfa7