Výsledky vyhledávání - "Proshchenko, Vitaly"

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Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Autor: Settipalli, Manoj, Proshchenko, Vitaly S, Neogi, Sanghamitra

Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of

Externí odkaz: http://arxiv.org/abs/2111.12831

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Modulation of Semiconductor Superlattice Thermopower Through Symmetry and Strain

Autor: Proshchenko, Vitaly. S., Settipalli, Manoj, Pimachev, Artem K., Neogi, Sanghamitra

Publikováno v: Journal of Applied Physics 129, 025301 (2021)

In doped semiconductors and metals, the thermopower decreases with increasing carrier concentration, in agreement with the Pisarenko relation. Here, we demonstrate a new strain engineering approach to increase the thermopower of [001] Si/Ge superlatt

Externí odkaz: http://arxiv.org/abs/1907.03461

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Heat and charge transport in bulk semiconductors with interstitial defects

Autor: Proshchenko, Vitaly S., Dholabhai, Pratik P., Neogi, Sanghamitra

Publikováno v: Phys. Rev. B 99, 014207 (2019)

Interstitial defects are inevitably present in doped semiconductors that enable modern-day electronic, optoelectronic or thermoelectric technologies. Understanding of stability of interstitials and their bonding mechanisms in the silicon lattice was

Externí odkaz: http://arxiv.org/abs/1806.00217

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