Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Projective range"'
Publikováno v:
Semiconductors. 55:289-295
The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1effc976edb9137669208cbb100adbc
https://doi.org/10.1134/s1063782621030179
https://doi.org/10.1134/s1063782621030179
Autor:
S. M. Reshetnikov, E. M. Borisova, O. R. Bakieva, A. A. Kolotov, I. K. Averkiev, F. Z. Gil’mutdinov
Publikováno v:
Physics of Metals and Metallography. 121:46-52
—The chemical composition and structure of thin surface layers of the Cu80Mn20 alloy before and after argon-ion irradiation in a pulse-periodic mode have been studied using X-ray electron spectroscopy and X-ray diffraction. It has been shown that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37761afbdd936c704eaae6c60680283e
https://doi.org/10.1134/s0031918x20010020
https://doi.org/10.1134/s0031918x20010020
Autor:
V.A. Skuratov, V. S. Kulikauskas, A. N. Tereshchenko, Dmitry A. Kiselev, A. N. Palagushkin, E. A. Steinman, A. A. Burmistrov, Vladimir Privezentsev, O. S. Zilova, V. V. Zatekin
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 83:1332-1339
The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties of a Zn-implanted SiO2 film is studied. The implantation of Zn ions is found to result in the formation of amorphous zinc nanoparticles around
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bfab597dedd443d340a30f80dce1ab2
https://doi.org/10.3103/s1062873819110194
https://doi.org/10.3103/s1062873819110194
Publikováno v:
Russian Physics Journal. 61:2012-2018
The influence of the temperature of implantation of Ni–Ti shape memory alloy with 84Kr15+ions at the energy E = 147 MeV on its structural-phase state is investigated. At the implantation temperatures 250 and 300°С, within the projective range Rp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ecb160937690ee5fb49992d266cb2e
https://doi.org/10.1007/s11182-019-01631-0
https://doi.org/10.1007/s11182-019-01631-0
Publikováno v:
Russian Physics Journal. 61:1499-1505
The paper presents research into the surface morphology, helium cluster formation and mechanical properties of high-purity tungsten after the high fluence and low-energy helium ion implantation and subsequent annealing. Investigations are based on sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d73d10596e4a428f10bc6d986a5ab16b
https://doi.org/10.1007/s11182-018-1562-8
https://doi.org/10.1007/s11182-018-1562-8
Publikováno v:
Results in Physics, Vol 11, Iss, Pp 822-825 (2018)
We report on the formation of planar waveguide in zinc sulfide (ZnS) single crystal by using multi-energy He ion implantation. The dark-mode spectrum are measured by prism coupling method. The guiding region in reconstructed refractive index profiles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01139a8f548c9fe577023e732279dc85
https://doi.org/10.1016/j.rinp.2018.10.031
https://doi.org/10.1016/j.rinp.2018.10.031
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:1165-1169
The results of investigating the microstructure and phase composition of AlN/SiNx multilayer films with alternating nanocrystalline aluminum nitride (nc-AlN) and amorphous silicon nitride (a-SiNx) phases, which were formed via magnetron sputtering, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09871d640315223fc6a4aabc13a87578
https://doi.org/10.1134/s1027451018050695
https://doi.org/10.1134/s1027451018050695
Publikováno v:
The Review of scientific instruments. 91(1)
Low-energy metal ion beams are of considerable interest in developing a high-intensity implantation method that modifies the elemental composition, microstructure, and properties of various materials at depths many times exceeding the projective rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c23db237866ad9f5a55b194b20eb4e4
https://pubmed.ncbi.nlm.nih.gov/32012570
https://pubmed.ncbi.nlm.nih.gov/32012570
Autor:
L. R. Grigorian, F. A. Kolokolov, M. S. Kovalenko, Yu. A. Agafonov, A. I. Kovalenko, V. I. Zinenko, N. M. Bogatov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:499-503
The irradiation of semiconductor structures with low-energy protons is used to control changes in their properties at a depth ranging from 0.1 to 1000 μm. Devices manufactured from such structures have high sensitivities to changes in the state of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eda159a871660631fdd232f479ef7f4
https://doi.org/10.1134/s1027451018030035
https://doi.org/10.1134/s1027451018030035
Publikováno v:
Journal of Non-Crystalline Solids. 553:120514
The diffusivity and interaction of As and In atoms co-implanted in thermally-grown SiO2 films were investigated. It was established that atom profiles and the nanocrystal growth are strongly dependent on the SiO2 surface conditions determining the ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cff73c2598d45cb3d1ed3b2b28732db5
https://doi.org/10.1016/j.jnoncrysol.2020.120514
https://doi.org/10.1016/j.jnoncrysol.2020.120514