Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Procopios C. Constantinou"'
Autor:
Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon, Jamie Bragg, Procopios C. Constantinou, Taylor J.Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Marek Bartkowiak, Y. Soh, Daniel Grolimund, Simon Gerber, Gabriel Aeppli
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract The progress of miniaturization in integrated electronics has led to atomic and nanometer‐sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as P and As.
Externí odkaz:
https://doaj.org/article/4c5c4e033fa84dad9f3b4d2c476d593f
Autor:
Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis, Procopios C. Constantinou, Taylor J. Z. Stock, Neil J. Curson, Steven R. Schofield, Matthias Muntwiler, Gabriel Aeppli, Yasin Ekinci
Publikováno v:
Science Advances, 9 (16)
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high
Autor:
Alexander Kölker, Emily V. S. Hofmann, Steven R. Schofield, Neil J. Curson, Sarah Fearn, Juerong Li, Procopios C. Constantinou, David R. McKenzie, Taylor J. Z. Stock, Oliver Warschkow, Eleanor Crane
Publikováno v:
ACS Nano
Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35f7d2308b3b4e69b843e1e4417ae0ee
http://arxiv.org/abs/1910.06685
http://arxiv.org/abs/1910.06685
Multiple scattering simulations are developed and applied to assess the potential of convergent beam low-energy electron diffraction (CBLEED) to distinguish between various reconstructions of the Si(001) surface. This is found to be readily achievabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a425943b9ad68eb47b42ef4c5e82a94
https://orca.cardiff.ac.uk/id/eprint/122891/7/1-s2.0-S0169433219315831-main.pdf
https://orca.cardiff.ac.uk/id/eprint/122891/7/1-s2.0-S0169433219315831-main.pdf