Zobrazeno 1 - 10
of 348
pro vyhledávání: '"Process control monitoring"'
Autor:
Samuel Parent, Frederic Vachon, Valerie Gauthier, Steve Lamoureux, Alexandre Paquette, Jacob Deschamps, Tommy Rossignol, Nicolas Roy, Philippe Arsenault, Henri Dautet, Serge A. Charlebois, Jean-Francois Pratte
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 127-137 (2024)
When developing a technology based on single-photon avalanche diodes (SPADs), the SPAD characterization is mandatory to debug, optimize and monitor the microfabrication process. This is especially true for the development of SPAD arrays 3D integrated
Externí odkaz:
https://doaj.org/article/227b16494c96405e875220c6e2c1c4e0
Publikováno v:
Micromachines, Vol 13, Iss 11, p 1943 (2022)
This paper presents a simple method for the in situ determination of Young’s moduli of surface-micromachined bilayer thin films. The test structure consists of a cantilever, a bottom drive electrode located near the anchor, and a bottom contact ele
Externí odkaz:
https://doaj.org/article/62a26081ab7d4d4c8cd0ab35214d545f
Akademický článek
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Autor:
Hui Zhang, Yu Wu, Minghui Niu, Wei Peng, Liyun Chen, L.Z. Ma, Hui Xie, Xue Zhang, Tiantian Liang, Yingyi Shao, Hua Jin, Masaaki Maezawa, Zhen Wang, Wanning Xu, Yang Gao, Jie Ren, Hao Sun, Liliang Ying, Huanli Liu
Publikováno v:
IEEE Transactions on Applied Superconductivity. 31:1-6
We have developed a 6-kA/cm² superconducting integrated circuit fabrication process toward large-scale single flux quantum digital circuits. To evaluate the process reliability and controllability, a set of process control monitors (PCMs) for monito
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba0d68f1b3cf6a8268b899f4ac8d071e
https://doi.org/10.1109/tasc.2021.3069631
https://doi.org/10.1109/tasc.2021.3069631
Publikováno v:
Human Factors and Ergonomics in Manufacturing & Service Industries. 31:316-326
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156cc334598a2143d973e8b0e012ee49
https://doi.org/10.1002/hfm.20892
https://doi.org/10.1002/hfm.20892
Akademický článek
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Publikováno v:
2021 IEEE Microelectronics Design & Test Symposium (MDTS).
Wafer Acceptance Test (WAT) or commonly known as Process Control Monitoring (PCM) includes numerous testing items that have many important applications, such as yield improvement and production cost control. The prediction of wafer yield based on WAT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f1f0fa01c261800c9e6a5079210601b
https://doi.org/10.1109/mdts52103.2021.9476151
https://doi.org/10.1109/mdts52103.2021.9476151
Publikováno v:
Micromachines, Vol 7, Iss 10, p 174 (2016)
This paper presents an intuitive yet effective in-situ thermal diffusivity testing structure and testing method. The structure consists of two doubly clamped beams with the same width and thickness but different lengths. When the electric current is
Externí odkaz:
https://doaj.org/article/222c03ad18c04f6c9de4d84b306d8dd1
Autor:
Tadashi Murao, Tsuyoshi Horikawa, Daisuke Shimura, Jun Ushida, Hiroki Yaegashi, Akemi Shiina, Yosuke Onawa, Hideaki Okayama
Publikováno v:
ECOC
Novel optical circuit with a microring resonator and polarization rotators was proposed for process control monitoring. The extraction method by TE and TM spectral analysis using the circuit showed sensitivity to sub-nm order fabrication deviations a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82bbcfb1f005aa1d53c1771d9bfb506a
https://doi.org/10.1109/ecoc48923.2020.9333168
https://doi.org/10.1109/ecoc48923.2020.9333168
Publikováno v:
Radiation Physics and Chemistry. 143:3-7
This paper presents some aspects of the process control method for a TT-300 E-Beam/X-Ray system at Mediscan, Austria. The novelty of the approach is the seamless integration of routine monitoring dosimetry with process data. This allows to calculate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da044927ac808923fd8a69874abccfe9
https://doi.org/10.1016/j.radphyschem.2017.09.011
https://doi.org/10.1016/j.radphyschem.2017.09.011