Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Priyavart Prajapat"'
Autor:
T. Eshwar, Nongthombam Joychandra Singh, Prateek Kothari, Dhirendra Kumar, Dheerendra Singh, Deepak Kumar Panwar, Moh. Shakil, Arvind Kumar Singh, Sanjeev Kumar, Pramod Kumar, Prashant Kumar, Priyavart Prajapat, Surajit Das, Sumitra Singh, Rajesh Singh Shekhawat
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1119:012014
On the 4H-SiC substrate, C-face and Si-face oxide layers have been grown by thermal oxidation process and sputtering. The thermal oxidation temperature dependence of 4H-silicon carbide (SiC) is systematically investigated using capacitance-voltage (C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4990910da40894f108482bb63457e36
https://doi.org/10.1088/1757-899x/1119/1/012014
https://doi.org/10.1088/1757-899x/1119/1/012014
