Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Priyavart Parjapat"'
Autor:
Kuldip Singh, Nitin Chaturvedi, Chinnamuthan Periasamy, D. K. Kharbanda, P. K. Khanna, Niketa Sharma, Shivanshu Mishra, Priyavart Parjapat, Ashok Chauhan, Nidhi Chaturvedi
Publikováno v:
IEEE Transactions on Electron Devices. 67:289-295
We have investigated the characteristics of pH and salinity sensor derived from the gated AlGaN/GaN high-electron mobility transistor (HEMT) structures in phosphate buffer saline (PBS) and aqueous salt solutions (NaCl + DI). In deionized (DI) water,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6717dd857705bb0455aef6834981d52b
https://doi.org/10.1109/ted.2019.2949821
https://doi.org/10.1109/ted.2019.2949821
Publikováno v:
Semiconductor Science and Technology. 36:095002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f02e88c2c554d456b921cfce60f8a41
https://doi.org/10.1088/1361-6641/ac066e
https://doi.org/10.1088/1361-6641/ac066e
Autor:
Arvind K. Singh, Surojit Pande, Ashok Chauhan, Nidhi Chaturvedi, Kuldip Singh, Prateek Kothari, Ramakant Sharma, Nitin Chaturvedi, Niketa Sharma, Rajdeep Chowdhury, Priyavart Parjapat, Shivanshu Mishra
Publikováno v:
Semiconductor Science and Technology. 36:045018
This work reports on the development of a compact GaN high-electron-mobility transistor (HEMT) based biosensor for an easy and early detection of breast cancer biomarker C-erbB2 in the human cell line. The early-stage detection process includes a rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e85d296622ac732b0b95a6aeb92917
https://doi.org/10.1088/1361-6641/abe83e
https://doi.org/10.1088/1361-6641/abe83e
Autor:
Bhoopendra Kumar Kushwaha, Saroj Kanta Patra, C. Dhanavantri, Kuldip Singh, Priyavart Parjapat, Ashok Chauhan, Suchandan Pal, Pawan Kumar, Sumitra Singh, Sonachand Adhikari, Sandeep Kumar, Ashok Kumar Lunia
Publikováno v:
Journal of Applied Mathematics and Physics. :1113-1117
GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial wafers and subsequently fabricated LEDs have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e743ef83ba56dcedb3e4361a5112bd1
https://doi.org/10.4236/jamp.2014.212129
https://doi.org/10.4236/jamp.2014.212129
Autor:
Bhoopendra Kumar Kushwaha, Priyavart Parjapat, Pramila Mahala, Omkar Jani, Abhijit Ray, Suchandan Pal, Sumitra Singh, Pawan Kumar, Kuldip Singh, Ashok Chauhan, C. Dhanavantri
Publikováno v:
Applied Physics A. 122
In this paper, the p-GaN/i-GaN–InGaN (5MQW)/n-GaN solar cell with 33 % indium composition is grown, fabricated and characterized. The X-ray diffraction, atomic force microscopy and photoluminance are performed for the solar cell. The photovoltaic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::321f60998f40f4258368732a557014e1
https://doi.org/10.1007/s00339-016-0146-0
https://doi.org/10.1007/s00339-016-0146-0
Autor:
Sonachand Adhikari, Saroj Kanta Patra, Ashok Chauhan, Kuldip Singh, Sandeep Kumar, Suchandan Pal, Pawan Kumar, Sumitra Singh, Ashok Kumar Lunia, Bhoopendra Kumar Kushwaha, C. Dhanavantri, Priyavart Parjapat
Publikováno v:
Scopus-Elsevier
Micro-patterning is carried out on top-surface of GaN/InGaN violet LEDs grown on patterned sapphire substrates (PSS). Electro-luminescence/ light-output of hexagonal hole-type and grating-type LEDs are found 1.8/2.0 and 1.4/1.5 times higher compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef9ecab02e27cc88c7a5e940f93b662c
http://www.scopus.com/inward/record.url?eid=2-s2.0-84983103354&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-84983103354&partnerID=MN8TOARS
