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pro vyhledávání: '"Priyanka Agrwal"'
Autor:
Priyanka Agrwal, Ajay Kumar
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 8, Iss , Pp 100117- (2024)
In this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length. Indium Gallium Arsenide (InGaAs) is a compound semiconductor that has gain
Externí odkaz:
https://doaj.org/article/098d4c0ccddf4fcc9dddf4522a97b664
