Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Priyamvada, Jadaun"'
Autor:
Priyamvada Jadaun, Bart Soreé
Publikováno v:
Magnetism, Vol 3, Iss 3, Pp 245-258 (2023)
Recent years have seen the emergence of moiré materials as an attractive platform for observing a host of novel correlated and topological phenomena. Moiré heterostructures are generated when layers of van der Waals materials are stacked such that
Externí odkaz:
https://doaj.org/article/81d34ff0dea346dfbb647596ecd208d9
Autor:
Xiyue S. Zhang, Darrell G. Schlom, Kyle Shen, Arnab Bose, David A. Muller, Priyamvada Jadaun, Robert A. Buhrman, Daniel C. Ralph, Rakshit Jain, Jocienne N. Nelson
Publikováno v:
ACS Applied Materials & Interfaces. 12:55411-55416
We report spin-torque ferromagnetic resonance studies of the efficiency of the damping-like (ξDL) spin-orbit torque exerted on an adjacent ferromagnet film by current flowing in epitaxial (001) and (110) IrO2 thin films. IrO2 possesses Dirac nodal l
Publikováno v:
npj Computational Materials, Vol 6, Iss 1, Pp 1-6 (2020)
Skyrmions are widely regarded as promising candidates for emergent spintronic devices. Dzyaloshinskii–Moriya interaction (DMI) is often critical to the generation and manipulation of skyrmions. However, there is a fundamental lack of understanding
The objective of this work is to study the effects of charge redistribution, applied layer-normal electric fields, applied strain, and layer engineering on the band alignment of Black Phosphorus (BP)/Molybdenum disulphide (MoS2) heterostructure throu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73f97628430a15210303eae9febccd62
Density functional theory analysis of symmetry-filtering scandium nitride magnetoresistive junctions
Autor:
Suyogya Karki, Sophia Chen, Daniel S. Marshall, Vivian Rogers, Jean Anne C. Incorvia, Priyamvada Jadaun
Publikováno v:
Spintronics XIV.
Magnetic tunnel junctions (MTJs) show great promise for implementation in high-performance STT-MRAM and novel computing regimes such as magnetic logic and neuromorphic computing. However, a handful of material setbacks stand in the way of the adoptio
Publikováno v:
Journal of Magnetism and Magnetic Materials. 467:96-107
Stochastic magnetization dynamics at non-zero temperatures gives rise to write errors in spin-transfer-torque random access memory (STTRAM). In this paper, the write error rate (WER) of an in-plane STTRAM bit is estimated by extending a previously de
Autor:
Arnab, Bose, Jocienne N, Nelson, Xiyue S, Zhang, Priyamvada, Jadaun, Rakshit, Jain, Darrell G, Schlom, Daniel C, Ralph, David A, Muller, Kyle M, Shen, Robert A, Buhrman
Publikováno v:
ACS applied materialsinterfaces. 12(49)
We report spin-torque ferromagnetic resonance studies of the efficiency of the damping-like (ξ
Neuromorphic computing mimics the organizational principles of the brain in its quest to replicate the brain's intellectual abilities. An impressive ability of the brain is its adaptive intelligence, which allows the brain to regulate its functions "
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6e2c17327862113a519b858501d626f
http://arxiv.org/abs/2010.15748
http://arxiv.org/abs/2010.15748
Publikováno v:
Proc Natl Acad Sci U S A
Spin Hall effect (SHE), a mechanism by which materials convert a charge current into a spin current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However, fundamental questions remain about t
Publikováno v:
Advanced Theory and Simulations. 4:2170027