Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Priyabrata Mudi"'
Autor:
Yueguang Zhou, Yuhui Yang, Imad Limame, Priyabrata Mudi, Marcel Hohn, Claudia Piccinini, Battulga Munkhbat, Yann Genuist, Jean-Michel Gérard, Julien Claudon, Kresten Yvind, Niels Gregersen, Stephan Reitzenstein, Minhao Pu
Publikováno v:
Materials for Quantum Technology, Vol 4, Iss 4, p 045401 (2024)
Single-photon emitters play a crucial role in integrated photonic quantum systems across various material platforms. In this study, we present a cavity-enhanced quantum dot single-photon source in a high-index contrast material platform (GaAs-on-insu
Externí odkaz:
https://doaj.org/article/eff50f1cc8ab446797f6fe66a92d706b
Publikováno v:
Physical Review B. 104
The GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin relaxation in the satellite X valley of indirect band gap ${\mathrm{Al}}_{0.63}{\mathrm{Ga}}_{0.37}\mathrm{As}$ epitaxial layers through polarization-resolved photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc9ff7502d070eef9344bc68c58c2a24
https://doi.org/10.1103/physrevb.104.115202
https://doi.org/10.1103/physrevb.104.115202
Publikováno v:
Journal of Luminescence. 213:204-209
GaAs/AlGaAs multi quantum well (QW) architecture is employed to study the optical injection of spin polarized electrons in Al0.22Ga0.78As material over the excitation energy range of 1.85–3.4 eV. By analyzing the degree of circular polarization (DC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8565dccd66f534ef6d91cddda1620874
https://doi.org/10.1016/j.jlumin.2019.05.036
https://doi.org/10.1016/j.jlumin.2019.05.036
Publikováno v:
Journal of Physics D: Applied Physics. 54:495107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0166d0512653d4308bae4e75c7683be6
https://doi.org/10.1088/1361-6463/ac252d
https://doi.org/10.1088/1361-6463/ac252d
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2018.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4ce228ab0c664508389da318519181
https://doi.org/10.1063/1.5113299
https://doi.org/10.1063/1.5113299
Publikováno v:
physica status solidi (b). 258:2100090
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dfd0dbedceb47f8c8a1c6e70e8540bf
https://doi.org/10.1002/pssb.202100090
https://doi.org/10.1002/pssb.202100090
Publikováno v:
Journal of Physics D: Applied Physics. 54:205101
Numerical simulations are carried out to estimate the inverse spin Hall voltage (V ISHE) as a function of applied electric field, dopant density and excitation energy for n-GaAs based opto-spintronic devices. Adopting a three valley rate equation mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2485b2934ff2e228e3a3061e64ccb6a
https://doi.org/10.1088/1361-6463/abe570
https://doi.org/10.1088/1361-6463/abe570
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 14:2000097
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4cec86854836458c6b4eb384650f39e
https://doi.org/10.1002/pssr.202000097
https://doi.org/10.1002/pssr.202000097
Publikováno v:
Journal of Applied Physics. 126:065703
Realization of the Inverse Spin Hall Effect (ISHE) with hot electrons in direct bandgap semiconductors is an intriguing puzzle. Here, we report the influence of steady state carrier accumulation in the satellite L valley on the establishment of ISHE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99fe4e55b2c84328a95e9b9665c69e9c
https://doi.org/10.1063/1.5108860
https://doi.org/10.1063/1.5108860