Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Priya Darshni Kaushik"'
Autor:
Priya Darshni Kaushik, Gholam Reza Yazdi, Garimella Bhaskara Venkata Subba Lakshmi, Grzegorz Greczynski, Rositsa Yakimova, Mikael Syväjärvi
Publikováno v:
Applied Sciences, Vol 10, Iss 11, p 4013 (2020)
Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fl
Externí odkaz:
https://doaj.org/article/c47928b058744d709baa726bc27650e0
Autor:
Grzegorz Greczynski, Pratima R. Solanki, Justinas Palisaitis, Ivan Gueorguiev Ivanov, G. Reza Yazdi, Marius Rodner, Priya Darshni Kaushik, Azher M. Siddiqui, Anver Aziz, Jens Eriksson, G.B.V.S. Lakshmi, Rositsa Yakimova, Mikael Syväjärvi
Publikováno v:
Carbon. 157:169-184
Surface functionalization has been shown to allow tailoring of graphene lattice thus making it suitable for different applications like sensing, supercapacitance devices, drug delivery system and memory devices. In this work, surface functionalizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::584cb477e92cec18ffc99fd5eb02c520
https://doi.org/10.1016/j.carbon.2019.09.071
https://doi.org/10.1016/j.carbon.2019.09.071
Autor:
Rositsa Yakimova, Gholam Reza Yazdi, Grzegorz Greczynski, Priya Darshni Kaushik, Mikael Syväjärvi, Garimella Bhaskara Venkata Subba Lakshmi
Publikováno v:
Applied Sciences
Volume 10
Issue 11
Applied Sciences, Vol 10, Iss 4013, p 4013 (2020)
Volume 10
Issue 11
Applied Sciences, Vol 10, Iss 4013, p 4013 (2020)
Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0ea91bddd930e0c7a696a5c98426815
Autor:
Anver Aziz, Grzegorz Greczynski, D.K. Avasthi, G. Reza Yazdi, Priya Darshni Kaushik, Azher M. Siddiqui, Mohammad Jafari, G.B.V.S. Lakshmi, Mikael Syväjärvi
Publikováno v:
Materials Science in Semiconductor Processing. 74:122-128
Epitaxial graphene (EG) on silicon carbide (SiC) is a combination of two robust materials that are excellent candidates for post silicon electronics. In this work, we systematically investigate str ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9618e8953995e14cb9496c8e6352e831
https://doi.org/10.1016/j.mssp.2017.09.026
https://doi.org/10.1016/j.mssp.2017.09.026
Publikováno v:
Surface and Interface Analysis. 49:910-918
Two sets of indium oxide thin films (~150 nm) grown on quartz substrates using thermal evaporation technique were processed separately with 25-keV Co− and N+ ions with several fluences ranging from 1.0 × 1015 to 1.0 × 1016 ions/cm2. The pristine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90d7ace0c49e2cacb8cb10786623efda
https://doi.org/10.1002/sia.6242
https://doi.org/10.1002/sia.6242
Autor:
G. Reza Yazdi, G.B.V.S. Lakshmi, Priya Darshni Kaushik, Anver Aziz, Mikael Syväjärvi, Azher M. Siddiqui, Rositsa Yakimova
Publikováno v:
AIP Conference Proceedings.
The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f02727f1ec5480853416413ce49e2b9
https://doi.org/10.1063/1.5038714
https://doi.org/10.1063/1.5038714
Autor:
G. Reza Yazdi, Vinay Gupta, Gurpreet Kaur, Mikael Syväjärvi, G.B.V.S. Lakshmi, Priya Darshni Kaushik, Azher M. Siddiqui, Pin-Cheng Lin, Jens Eriksson, D.K. Avasthi, Ivan Gueorguiev Ivanov, Anver Aziz
In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f8e5e5535750344087ef8a2a6207367
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-136854
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-136854
