Zobrazeno 1 - 10
of 129
pro vyhledávání: '"Privezentsev, V."'
Autor:
Privezentsev, V. V., Sergeev, A. P., Firsov, A. A., Kulikauskas, V. S., Zatekin, V. V., Kirilenko, E. P., Goryachev, A. V., Kovalskiy, V. A.
Publikováno v:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Apr2024, Vol. 18 Issue 2, p428-432, 5p
Autor:
Tereshchenko, A. N., Privezentsev, V. V., Firsov, A. A., Kulikauskas, V. S., Zatekin, V. V., Voronova, M. I.
Publikováno v:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Dec2023, Vol. 17 Issue 6, p1232-1237, 6p
Autor:
Privezentsev, V. V.1 (AUTHOR) v.privezentsev@mail.ru, Sergeev, A. P.1 (AUTHOR), Firsov, A. A.1 (AUTHOR), Yakimov, E. E.2 (AUTHOR), Irzhak, D. V.2 (AUTHOR)
Publikováno v:
Crystallography Reports. Nov2021, Vol. 66 Issue 6, p1090-1094. 5p.
Publikováno v:
Physics of the Solid State. 64:161-168
The composition, structure and properties, as well as the current-voltage characteristics of a layered structure consisting of two 50 nm thick amorphous SiO2 films deposited by electron beam evaporation, between which a Zn film with a thickness that
Autor:
Privezentsev, V. V.1,2 (AUTHOR) v.privezentsev@mail.ru, Sergeev, A. P.1 (AUTHOR), Kulikauskas, V. S.3 (AUTHOR), Kiselev, D. A.4 (AUTHOR), Trifonov, A. Yu.5,6 (AUTHOR), Tereshchenko, A. N.7 (AUTHOR)
Publikováno v:
Semiconductors. 2020, Vol. 54 Issue 12, p1650-1656. 7p.
Akademický článek
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Publikováno v:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Apr2023, Vol. 17 Issue 2, p363-367, 5p
Autor:
Privezentsev, V. V.1 (AUTHOR) privezentsev@ftian.ru, Steinman, E. A.2 (AUTHOR), Tereshchenko, A. N.2 (AUTHOR), Kolesnikov, N. N.2 (AUTHOR), Makunin, A. V.3 (AUTHOR)
Publikováno v:
Crystallography Reports. May2019, Vol. 64 Issue 3, p451-456. 6p.
Autor:
Privezentsev, V. V.1 (AUTHOR) privezentsev@ftian.ru, Kulikauskas, V. S.2 (AUTHOR), Skuratov, V. A.3 (AUTHOR), Zilova, O. S.4 (AUTHOR), Burmistrov, A. A.4 (AUTHOR), Presnyakov, M. Yu.5 (AUTHOR), Goryachev, A. V.6 (AUTHOR)
Publikováno v:
Semiconductors. Mar2019, Vol. 53 Issue 3, p313-320. 8p.
Autor:
Khramov, E. V.1 (AUTHOR), Privezentsev, V. V.2,3 (AUTHOR) v.privezentsev@mail.ru, Palagushkin, A. N.3 (AUTHOR)
Publikováno v:
Semiconductors. Dec2019, Vol. 53 Issue 16, p2115-2117. 3p.