Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Privalov, E. A."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 53-56 (2010)
A simple method for the determination of the concentration of vacant deep traps in the vicinity of the «film — substrate» interface is proposed. The method is based on determining the increase in the width of the conducting channel under extrinsi
Externí odkaz:
https://doaj.org/article/6eb4ee01d9884831817b99217dfb797e
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 25-28 (2009)
It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV) at the
Externí odkaz:
https://doaj.org/article/76d5cd3eeaa9486daaa694778a2b90fb
Publikováno v:
IOP Conference Series: Earth & Environmental Science; 2023, Vol. 1138 Issue 1, p1-6, 6p
Autor:
Zhbanov, Yu. K., Privalov, E. A.
Publikováno v:
Mechanics of Solids; Oct2022, Vol. 57 Issue 5, p1054-1058, 5p
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 52-54 (2008)
A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these str
Externí odkaz:
https://doaj.org/article/0056b8a696854f4ba82e125e11b8579f
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 3-5 (2007)
It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic. A method for pr
Externí odkaz:
https://doaj.org/article/b797d1c97ad64f2d8f44c0e7c5793b5d
Publikováno v:
Russian Electrical Engineering; Jul2021, Vol. 92 Issue 7, p404-407, 4p
Akademický článek
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Publikováno v:
Russian Electrical Engineering; Jul2020, Vol. 91 Issue 7, p429-432, 4p
Publikováno v:
IOP Conference Series: Earth & Environmental Science; 5/27/2020, Vol. 488, p1-6, 6p