Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Privalov, A. N."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 53-56 (2010)
A simple method for the determination of the concentration of vacant deep traps in the vicinity of the «film — substrate» interface is proposed. The method is based on determining the increase in the width of the conducting channel under extrinsi
Externí odkaz:
https://doaj.org/article/6eb4ee01d9884831817b99217dfb797e
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 25-28 (2009)
It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV) at the
Externí odkaz:
https://doaj.org/article/76d5cd3eeaa9486daaa694778a2b90fb
Publikováno v:
MATEC Web of Conferences, Vol 220, p 06001 (2018)
The analytical model of three wheels mobile robot as the control object is worked out with use of the theoretical mechanics. Model includes two parts, part which describes longitudinal acceleration and dynamics of maneuvers on the azimuth angle and p
Externí odkaz:
https://doaj.org/article/f89e2005f08c48f0926b5e04eee8b1db
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 52-54 (2008)
A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these str
Externí odkaz:
https://doaj.org/article/0056b8a696854f4ba82e125e11b8579f
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 3-5 (2007)
It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic. A method for pr
Externí odkaz:
https://doaj.org/article/b797d1c97ad64f2d8f44c0e7c5793b5d
Publikováno v:
Istrazivanja i projektovanja za privredu, Vol 17, Iss 3, Pp 295-303 (2019)
Autonomous fault-tolerant systems, operated at hard environment, are considered in this paper. It is shown that common method of units failure compensation, based on an introduction to the system a structural redundancy, leads to the increase of weig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::4b8b3c3443eeda8aef36348698e39afc
https://scindeks-clanci.ceon.rs/data/pdf/1451-4117/2019/1451-41171903295L.pdf
https://scindeks-clanci.ceon.rs/data/pdf/1451-4117/2019/1451-41171903295L.pdf
Autor:
Gorev, Nikolai B., Kodzhespirova, Inna F., Privalov, Evgeny N., Khuchua, Nina, Khvedelidze, Levan, Shur, Michael S. *
Publikováno v:
In Solid State Electronics 2005 49(3):343-349
Autor:
Gorev, Nikolai B., Kodzhespirova, Inna, Privalov, Evgeny N., Khvedelidze, Levan, Khuchua, Nina, Peradze, Giorgi G., Shur, Michael S., Stevens, Kevin
Publikováno v:
In Solid State Electronics 2003 47(9):1569-1575
Publikováno v:
Образование и наука
Introduction. Nowadays, digital transformation of higher vocational education brings to the agenda questions about the ways and forms, which are adequate to the current state of society and the tasks of innovative development of the economy, to train
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3377::40bf3a92955522ffcd722953507b6579
https://elar.rsvpu.ru/handle/123456789/36261
https://elar.rsvpu.ru/handle/123456789/36261
Autor:
Gorev, Nikolai B., Kodzhespirova, Inna F., Kovalenko, Yury A., Privalov, Evgeny N., Prokhorov, Eugenio F. *
Publikováno v:
In Microelectronics Journal December 2001 32(12):979-982