Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Pritam Yogi"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1184-1192 (2020)
Nanosheet field-effect transistors (NSFETs) have emerged as a novel device replacement for sub-7nm CMOS technology nodes. However, due to smaller fin thickness (Tfin = 5nm), NSFETs are more vulnerable to the process-induced variations. Among various
Externí odkaz:
https://doaj.org/article/db8c3b3bb6fc4c59b05c969bef027e09
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1184-1192 (2020)
Nanosheet field-effect transistors (NSFETs) have emerged as a novel device replacement for sub-7nm CMOS technology nodes. However, due to smaller fin thickness (Tfin = 5nm), NSFETs are more vulnerable to the process-induced variations. Among various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e755323117ea2fbfbded606b98f5d8ad
https://doi.org/10.1109/jeds.2020.3026534
https://doi.org/10.1109/jeds.2020.3026534
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db1bd16870941f5380b9c3b347c253ae
https://doi.org/10.1109/icee50728.2020.9776740
https://doi.org/10.1109/icee50728.2020.9776740
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0402e113e9565d10eef5c5855a381cd
https://doi.org/10.1109/icee50728.2020.9776895
https://doi.org/10.1109/icee50728.2020.9776895
Autor:
H. S. Jatana, Abhisek Dixit, Manoj Kumar, Chandan K. Jha, Kritika Aditya, Ramendra Singh, Sanjeev Basra, Pritam Yogi
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
In this paper, we investigate and report the total ionizing dose (TID) response of 0.18μm bulk n-channel MOSFETs subjected to a total cumulative dose of lKRad and lMRad by gamma radiations. The n-channel devices are characterized for their pre- and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92a43a78badca2a4be595342a49081a9
https://doi.org/10.1109/edtm.2019.8731170
https://doi.org/10.1109/edtm.2019.8731170