Graphene buffer layer on Si-terminated SiC : a multi-minima energy surface studied with an empirical interatomic potential

Autor: Lampin, Evelyne, Priester, Catherine, Krzeminski, Christophe, Magaud, Laurence

Publikováno v: Journal of Applied Physics, Vol. 107, p. 103514 (2010)

The atomistic structure of the graphene buffer layer on Si-terminated SiC is studied using a modified environment-dependent interatomic potential (EDIP). The investigation of equilibrium state by conjuguate gradients suffers from a complex multi-mini

Externí odkaz: http://arxiv.org/abs/0912.2034

Strained heteroepitaxy on nanomesas: a way toward perfect lateral organization of quantum dots

Autor: Bavencoffe, Maxime, Houdart, Eglantine, Priester, Catherine

Publikováno v: In Journal of Crystal Growth 2005 275(1):305-316

Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ?

Autor: Wallart, Xavier, Priester, Catherine, Deresmes, D., Gehin, Thomas, Mollot, Francis

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2002, 81, pp.1060-1062
Applied Physics Letters, 2002, 81, pp.1086-1088
Applied Physics Letters, American Institute of Physics, 2002, 81, pp.1086-1088
Applied Physics Letters, 2002, 81, pp.1060-1062

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0c1765e84883881c114f5cfb03619e28
https://hal.archives-ouvertes.fr/hal-00018491

Nucleation of semiconductor Quantum Dots on nanomesas : role of stressors and early stages of capping process.

Autor: Meynier, Cyril, Priester, Catherine

Publikováno v: MRS Online Proceedings Library; 2005, Vol. 901 Issue 1, p1-6, 6p

Plastic Relaxation Mechanics in Systems with a Twist-Bonded Layer.

Autor: Priester, Catherine, Grenet, Geneviève

Publikováno v: MRS Online Proceedings Library; 2002, Vol. 740 Issue 1, p1-7, 7p