Experimental and numerical analysis of surface melt dynamics in 200 ns-excimer laser crystallization of a-Si films on glass

Autor: Fogarassy, E. ^{a, *}, de Unamuno, S. ^a, Prévot, B. ^a, Harrer, T. ^b, Maresch, S. ^b

Publikováno v: In Thin Solid Films 15 February 2001 383(1-2):48-52

Raman scattering evaluation of lattice damage and electrical activity in Be-implanted GaAs.

Autor: Gargouri, M., Prevot, B., Schwab, C.

Publikováno v: Journal of Applied Physics; 11/1/1987, Vol. 62 Issue 9, p3902, 10p, 1 Diagram, 10 Graphs

Si1-chi-ge-chi thin films deposited by the pulsed excimer laser ablation technique

Autor: Antoni, F., Fogarassy, E., Fuchs, C., Prevot, B., Stoquert, J.P.

Publikováno v: Photon-assited Processing of Surface and Thin Films
Symposium B on Photon-Assisted processing of Surfaces and Thin Films of the E-Mrs Spring Conference
Symposium B on Photon-Assisted processing of Surfaces and Thin Films of the E-Mrs Spring Conference, May 1995, Strasbourg, France. pp.175-179

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::25dba9ef5dc21da2a94e60abf4514a19
https://hal.in2p3.fr/in2p3-00015995

Si implantation of GaAs at low and medium doses: Raman assessment of dopant activation

Autor: Zekeng, S., Prevot, B., Schwab, C.

Publikováno v: Materials Science and Engineering
Materials Science and Engineering, Elsevier, 1990, B5, pp.269

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4bd2e7f01370fdd0fa14d5a94d7c2758
http://hal.in2p3.fr/in2p3-00016156

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