Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Preston T. Webster"'
Autor:
Walter R. Buchwald, Robert E. Peale, Perry C. Grant, Julie V. Logan, Preston T. Webster, Christian P. Morath
Publikováno v:
Applied Sciences, Vol 12, Iss 11, p 5317 (2022)
A mathematical method is presented for the extraction of defect parameters from the multiexponential decays generated during deep-level transient spectroscopy experiments. Such transient phenomenon results from the ionization of charge trapped in def
Externí odkaz:
https://doaj.org/article/676a7cbfc8a7453eb89a000bf7393e9f
Publikováno v:
Journal of Electronic Materials. 51:4695-4702
Autor:
Alexander T. Newell, Preston T. Webster, Julie V. Logan, Zinah M. Alsaad, Christian P. Morath, Rigo A. Carrasco, Chris Hains, Joshua M. Duran, Ganesh Balakrishnan, Gamini Ariyawansa, Marko S. Milosavljevic, Diana Maestas, Shane R. Johnson
Publikováno v:
2022 IEEE Photonics Conference (IPC).
Understanding the fundamental driver of semiconductor radiation tolerance with experiment and theory
Publikováno v:
Physical Review Materials. 6
Autor:
Rigo A. Carrasco, Alexander T. Newell, Zinah M. Alsaad, Julie V. Logan, Joshua M. Duran, Gamini Ariyawansa, Benjamin Pinkie, Christian P. Morath, Preston T. Webster
Publikováno v:
Journal of Applied Physics. 133:104503
Capacitance–voltage measurements are a powerful technique to determine doping profiles of semiconductor pn junctions and Schottky barrier diodes. The measurements were recently extended to III-V-based mid-wavelength nBn infrared detectors, and abso
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 70:1-10
Random telegraph noise (RTN) is a type of low-frequency noise that degrades the sensitivity of focal plane arrays (FPAs) and other electronics. Careful analysis of RTN provides information about the material defects generating this noise and ultimate
Autor:
Elias B. Frantz, Christian P. Morath, Michael P. Short, Julie V. Logan, Preston T. Webster, Lilian K. Casias
Publikováno v:
Materials Advances. 1:45-53
As the potential applications of GaN and Ga2O3 are limited by the inadequacy of conventional doping techniques, specifically when uniform selective area p-type doping is required, the potential for transmutation doping of these materials is analyzed.
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
An epitaxial lift-off (ELO) technology has been demonstrated for monocrystalline CdTe/MgCdTe double-heterostructure (DH) with the assistant of photoresist. The increased photoluminescence (PL) intensity is observed from the lift-off thin films, and c
Publikováno v:
Other repository
© 1963-2012 IEEE. High-energy (>40 MeV) protons are commonly used to characterize radiation tolerance of space electronics against damage caused by energy transfer to the nuclei and electrons of semiconductor materials while in orbit. While practica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc7d5f5a255374683c321e4627d00e16
https://hdl.handle.net/1721.1/133215
https://hdl.handle.net/1721.1/133215
Autor:
Rigo A. Carrasco, Christian P. Morath, Julie V. Logan, Kevin B. Woller, Perry C. Grant, Haylie Orozco, Marko S. Milosavljevic, Shane R. Johnson, Ganesh Balakrishnan, Preston T. Webster
Publikováno v:
Applied Physics Letters. 120:031102