Zobrazeno 1 - 10
of 182
pro vyhledávání: '"Prestat, E."'
Publikováno v:
Acta Materialia 277 (2024) 120162
We recast the Howie-Whelan equations for generating simulated transmission electron microscope (TEM) images, replacing the dependence on local atomic displacements with atomic positions only. This allows very rapid computation of simulated TEM images
Externí odkaz:
http://arxiv.org/abs/2401.14781
Publikováno v:
Applied Catalysis A: General 613 (2021) 118031
The effect of silica-promotion on the reduction of iron oxides in hydrogen was investigated using in situ X-ray diffraction and aberration-corrected transmission electron microscopy to understand the mechanism of reduction and the identity of the iro
Externí odkaz:
http://arxiv.org/abs/2105.05620
Autor:
Huang, K., Rowe, P., Chi, C., Sreepal, V., Bohn, T., Zhou, K. -G., Su, Y., Prestat, E., Pillai, P. Balakrishna, Cherian, C. T., Michaelides, A., Nair, R. R.
The surface free energy is one of the most fundamental properties of solids, hence, manipulating the surface energy and thereby the wetting properties of solids, has tremendous potential for various physical, chemical, biological as well as industria
Externí odkaz:
http://arxiv.org/abs/2002.04522
Autor:
Del Pozo-Zamudio, O., Genco, A., Schwarz, S., Withers, F., Walker, P. M., Godde, T., Schofield, R. C., Rooney, A. P., Prestat, E., Watanabe, K., Taniguchi, T., Clark, C., Haigh, S. J., Krizhanovskii, D. N., Novoselov, K. S., Tartakovskii, A. I.
Publikováno v:
O. Del Pozo-Zamudio et al. 2D materials 7 (2020) 3, 031006
Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal
Externí odkaz:
http://arxiv.org/abs/1911.06808
Autor:
Abraham, J., Vasu, K. S., Williams, C. D., Gopinadhan, K., Su, Y., Cherian, C., Dix, J., Prestat, E., Haigh, S. J., Grigorieva, I. V., Carbone, P., Geim, A. K., Nair, R. R.
Publikováno v:
Nature Nanotechnology 12, 546-550, 2017
Graphene oxide membranes show exceptional molecular permeation properties, with a promise for many applications. However, their use in ion sieving and desalination technologies is limited by a permeation cutoff of ~9 Angstrom, which is larger than hy
Externí odkaz:
http://arxiv.org/abs/1701.05519
Autor:
Vasu, K. S., Prestat, E., Abraham, J., Dix, J., Kashtiban, R. J., Beheshtian, J., Sloan, J., Carbone, P., Neek-Amal, M., Haigh, S. J., Geim, A. K., Nair, R. R.
Publikováno v:
Nature Communications 7, Article number: 12168 (2016)
Van der Waals assembly of two-dimensional (2D) crystals continue attract intense interest due to the prospect of designing novel materials with on-demand properties. One of the unique features of this technology is the possibility of trapping molecul
Externí odkaz:
http://arxiv.org/abs/1605.07106
Autor:
Cao, Y., Mishchenko, A., Yu, G. L., Khestanova, K., Rooney, A., Prestat, E., Kretinin, A. V., Blake, P., Shalom, M. B., Balakrishnan, G., Grigorieva, I. V., Novoselov, K. S., Piot, B. A., Potemski, M., Watanabe, K., Taniguchi, T., Haigh, S. J., Geim, A. K., Gorbachev, R. V.
Publikováno v:
Nano Letters 15 (8), pp 4914 - 4921 (2015)
Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest reacts and decomposes in air, which has severely hindered their investigation
Externí odkaz:
http://arxiv.org/abs/1502.03755
Autor:
de Reotier, P. Dalmas, Prestat, E., Bayle-Guillemaud, P., Barski, A., Marty, A., Jamet, M., Suter, A., Prokscha, T., Salman, Z., Morenzoni, E., Yaouanc, A.
Publikováno v:
Phys. Rev. B 91, 245408 (2015)
We have characterized a film of Ge_0.9Mn_0.1 forming self-organized nanocolumns perpendicular to the Ge substrate with high resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy, and bulk magnetization a
Externí odkaz:
http://arxiv.org/abs/1405.4238
Autor:
Jain, A., Vergnaud, C., Peiro, J., Breton, J. C. Le, Prestat, E., Louahadj, L., Portemont, C., Ducruet, C., Baltz, V., Marty, A., Barski, A., Bayle-Guillemaud, P., Vila, L., Attané, J. -P., Augendre, E., Jaffrès, H., George, J. -M., Jamet, M.
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions
Externí odkaz:
http://arxiv.org/abs/1204.4384
Autor:
Jain, A., Rojas-Sanchez, J. -C., Cubukcu, M., Peiro, J., Breton, J. C. Le, Prestat, E., Vergnaud, C., Louahadj, L., Portemont, C., Ducruet, C., Baltz, V., Barski, A., Bayle-Guillemaud, P., Vila, L., Attané, J. -P., Augendre, E., Desfonds, G., Gambarelli, S., Jaffrès, H., George, J. -M., Jamet, M.
Publikováno v:
Physical Review Letters 109, 106603 (2012)
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunn
Externí odkaz:
http://arxiv.org/abs/1203.6491