Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Prest, James"'
Publikováno v:
In Energy Research & Social Science January 2021 71
Publikováno v:
In Biomass and Bioenergy January 2021 144
Autor:
Prest, James
Publikováno v:
Renewable Energy Law and Policy Review, 2018 Dec 01. 9(1), 44-67.
Externí odkaz:
https://www.jstor.org/stable/26638292
Autor:
Prest, James
Publikováno v:
Title page, contents and introduction only.
Thesis (B.A. (Hons))--University of Adelaide, Dept. of Politics, 1991.
Includes bibliographical references (leaves [89-104]).
Includes bibliographical references (leaves [89-104]).
Externí odkaz:
http://web4.library.adelaide.edu.au/theses/09AR/09arp936.pdf
Autor:
Prest, James
Publikováno v:
Renewable Energy Law and Policy Review, 2012 Jan 01. 3(1), 25-41.
Externí odkaz:
https://www.jstor.org/stable/24324839
Autor:
Prest, James
Publikováno v:
Renewable Energy Law and Policy Review, 2011 Jan 01. 2(2), 171-177.
Externí odkaz:
https://www.jstor.org/stable/24324732
Autor:
Prest, James
Publikováno v:
Renewable Energy Law and Policy Review, 2011 Jan 01. 2(2), 89-90.
Externí odkaz:
https://www.jstor.org/stable/24324723
Autor:
Prest, James
Publikováno v:
University of Wollongong Thesis Collection.
This thesis examines the regulation of private native forestry in two Australian jurisdictions: NSW and Tasmania. Private forests have long been the forgotten forests - a neglected aspect of forest policy in Australia. Appropriate supervision of priv
Externí odkaz:
http://ro.uow.edu.au/theses/413
Autor:
Prest, James
Publikováno v:
University of Wollongong Thesis Collection.
This thesis examines the regulation of private native forestry in two Australian jurisdictions: NSW and Tasmania. Private forests have long been the forgotten forests - a neglected aspect of forest policy in Australia. Appropriate supervision of priv
Externí odkaz:
http://ro.uow.edu.au/theses/413
Publikováno v:
Science and Technology of Advanced Materials, Vol 13, Iss 5, p 055002 (2012)
Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives
Externí odkaz:
https://doaj.org/article/0ae005c56edf40ec9a460dedeb0e2b44