Zobrazeno 1 - 10
of 248
pro vyhledávání: '"Prejbeanu, I."'
The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a
Externí odkaz:
http://arxiv.org/abs/2312.05245
Autor:
Salomoni, D., Peng, Y., Farcis, L., Auffret, S., Hehn, M., Malinowski, G., Mangin, S., Dieny, B., Buda-Prejbeanu, L. D., Sousa, R. C., Prejbeanu, I. L.
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin o
Externí odkaz:
http://arxiv.org/abs/2305.15135
Autor:
Peng, Y., Salomoni, D., Malinowski, G., Zhang, W., Hohlfeld, J., Buda-Prejbeanu, L. D., Gorchon, J., Vergès, M., Lin, J. X., Sousa, R. C., Prejbeanu, I. L., Mangin, S., Hehn, M.
Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of
Externí odkaz:
http://arxiv.org/abs/2212.13279
Autor:
Valli, A. Sidi El, Iurchuk, V., Lezier, G., Bendjeddou, I., Lebrun, R., Lamard, N., Litvinenko, A., Langer, J., Wrona, J., Vila, L., Sousa, R., Prejbeanu, I. L., Dieny, B., Ebels, U.
Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output dc voltage using magnetic tunnel junctions (MTJ) with strong perpendi
Externí odkaz:
http://arxiv.org/abs/2110.14501
Autor:
Caçoilo, N., Lequeux, S., Teixeira, B. M. S., Dieny, B., Sousa, R. C., Sobolev, N. A., Fruchart, O., Prejbeanu, I. L., Buda-Prejbeanu, L. D.
Publikováno v:
Phys. Rev. Applied 16, 024020 (2021)
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy i
Externí odkaz:
http://arxiv.org/abs/2005.06024
Autor:
Perrissin, N., Lequeux, S., Strelkov, N., Vila, L., Buda-Prejbeanu, L., Auffret, S., Sousa, R. C., Prejbeanu, I. L., Dieny, B.
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ
Externí odkaz:
http://arxiv.org/abs/1803.02663
Akademický článek
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Autor:
Chavent, A., Ducruet, C., Portemont, C., Vila, L., Alvarez-Hérault, J., Sousa, R., Prejbeanu, I. L., Dieny, B.
Publikováno v:
Phys. Rev. Applied 6, 034003 (2016)
Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the
Externí odkaz:
http://arxiv.org/abs/1609.08385
Akademický článek
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Autor:
Lacoste, B., de Castro, M. Marins, Devolder, T., Sousa, R. C., Buda-Prejbeanu, L. D., Auffret, S., Ebels, U., Ducruet, C., Prejbeanu, I. L., Vila, L., Rodmacq, B., Dieny, B.
Publikováno v:
Phys. Rev. B 90, 224404 (2014)
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimental
Externí odkaz:
http://arxiv.org/abs/1407.6240