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Autor:
Anil B. Lingambudi, Janani Swaminathan, Trinadhachari Kosuru, Krishna Thangaraj, Gary A. Tressler, Steve Wilson, Tom Kroetsch, Navya Chaitanya Gogula, Preetham Raghavendra
Publikováno v:
2020 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS).
Spin Torque Transfer Magneto-resistive Random-Access Memory (STT-MRAM) is a type of non-volatile memory that stores data in magnetic domains. It is a very interesting market space that STT-MRAM will support, trying to take the best of both worlds, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ca86ab85a411c1528a4d91330d3d99
https://doi.org/10.1109/edaps50281.2020.9312911
https://doi.org/10.1109/edaps50281.2020.9312911
