Use of CCD to Detect Terrestrial Cosmic Rays at Ground Level: Altitude vs. Underground Experiments, Modeling and Numerical Monte Carlo Simulation

Autor: Tsiligiannis, Georgios, Dilillo, Luigi, Bosio, Alberto, Girard, Patrick, Pravossoudovitch, Serge, Virazel, Arnaud, Cocquerez, Philippe, Autran, Jean-Luc, Litterio, Antonio, Wrobel, Frédéric, Saigné, Frédéric

Publikováno v: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.3380-3388. ⟨10.1109/TNS.2014.2365038⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (6), pp.3380-3388. ⟨10.1109/TNS.2014.2365038⟩

International audience; In this work, we used a commercial charge-coupled device (CCD) camera to detect and monitor terrestrial cosmic rays at ground level. Multi-site characterization has been performed at sea level (Marseille), underground (Modane

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48a321a8d4b94b3c67b4aa443183595e
https://hal.science/hal-04056448

Investigating Multiple-Cell-Upsets on a 90mn SRAM

Autor: Tsiligiannis, Georgios, Dilillo, Luigi, Bosio, Alberto, Girard, Patrick, Pravossoudovitch, Serge, Todri-Sanial, Aida, Virazel, Arnaud

Publikováno v: Colloque GDR SoC-SiP
Colloque GDR SoC-SiP, 2013, Lyon, France. 2013

National audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::094bb2974c476b439cd8d0c2389e2b29
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00839108

Analysis and Fault Modeling of Actual Resistive Defects in ATMELtm eFlash Memories

Autor: Mauroux, Pierre-Didier, Virazel, Arnaud, Bosio, Alberto, Dilillo, Luigi, Girard, Patrick, Pravossoudovitch, Serge, Godard, Benoît, Feste, Gilles, Vachez, Laurent

Publikováno v: Journal of Electronic Testing
Journal of Electronic Testing, Springer Verlag, 2012, 28 (2), pp.215-228

International audience; The embedded Flash (eFlash) technology can be subject to defects creating functional faults. In this paper, we first generalize the electrical model of the ATMEL TSTAC eFlash memory technology proposed in [1]. The model is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::611735227bc89620244ed9cd6691ade5
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00806773

On Using Address Scrambling for Defect Tolerance in SRAMs

Autor: Alves Fonseca, Renan, Dilillo, Luigi, Bosio, Alberto, Girard, Patrick, Pravossoudovitch, Serge, Virazel, Arnaud, Badereddine, Nabil

Publikováno v: International test Conference
International test Conference, Sep 2011, Anaheim, CA, United States. pp.1-8, ⟨10.1109/TEST.2011.6139149⟩

International audience; This paper proposes an innovative approach to cope with defects in SRAM bit-cell array. Traditional approaches use spare parts (rows, columns or blocks) to replace defective bit-cells. Instead of replacing defective bit-cells,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::dfbeaaeab427dfe42caf6db079521660
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00805334

On using a SPICE-like TSTAC™ eFlash model for design and test

Autor: Mauroux, Pierre-Didier, Virazel, Arnaud, Bosio, Alberto, Dilillo, Luigi, Girard, Patrick, Pravossoudovitch, Serge, Godard, Benoît, Festes, Gilles, Vachez, Laurent

Publikováno v: 14th International Symposium on Design and Diagnostics of Electronic Circuits ans Systems
DDECS: Design and Diagnostics of Electronic Circuits ans Systems
DDECS: Design and Diagnostics of Electronic Circuits ans Systems, Apr 2011, Cottbus, Germany. pp.359-370, ⟨10.1109/DDECS.2011.5783111⟩

International audience; The Flash technology is the most popular non-volatile memory technology. In this paper, we present the ability of a SPICE-like model of the ATMEL TSTAC™ eFlash technology to guide the design and test phases. This model is co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::329021547505747a5ccb163ca91891a7
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00592203