Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Pravin N. Kondekar"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:396-402
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b42f6095655a129827843f1edb6fd75f
https://doi.org/10.1109/tdmr.2022.3181672
https://doi.org/10.1109/tdmr.2022.3181672
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 69:863-869
An enormous study is being carried out in the field of emerging steep slope devices, specifically on negative-capacitance-based and phase transition-based devices. This article investigates the action of ferroelectric (FE) and phase transition materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6020b10a84d7ccc35bbf96ea8669bc8f
https://doi.org/10.1109/tuffc.2021.3130194
https://doi.org/10.1109/tuffc.2021.3130194
Autor:
Rajeewa Kumar Jaisawal, Sunil Rathore, Pravin N. Kondekar, Shashank Kumar Banchhor, Navjeet Bagga
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f1f278001cb8f74c179f3eeb451e126
https://doi.org/10.1109/icee56203.2022.10117984
https://doi.org/10.1109/icee56203.2022.10117984
Publikováno v:
IEEE Transactions on Electron Devices. 68:853-859
Phase transition FinFET (PT-FinFET) is an emerging steep slope device that utilizes phase transition material (PTM) at the source of the host FinFET to achieve steep switching and boost ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d7e4fad01ad6523cefd0fdccba13254
https://doi.org/10.1109/ted.2020.3043222
https://doi.org/10.1109/ted.2020.3043222
Publikováno v:
Transactions on Electrical and Electronic Materials. 22:267-273
In this paper, we have discussed threshold voltage and drain induced barrier lowering in NCFET. Threshold voltage in NCFET is lower as compared to MOSFET which is mainly because of negative equivalent oxide capacitance in NCFET. Further, we have disc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65e49bd7680a40dd2a018bc04f47c706
https://doi.org/10.1007/s42341-020-00230-y
https://doi.org/10.1007/s42341-020-00230-y
Publikováno v:
Silicon. 13:9-23
This work investigates the novel device structure, silicon-on-nothing electrostatically doped junctionless tunnel field effect transistor (SON-ED-JLTFET) with high-K stacked hetero-gate technology for its short channel effects (SCEs) immune propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04b3ba29868ea97e8d106584a9c080f5
https://doi.org/10.1007/s12633-020-00404-6
https://doi.org/10.1007/s12633-020-00404-6
Autor:
Bhaskar Awadhiya, Pravin N. Kondekar, Sameer Yadav, Pranshoo Upadhyay, Rajeewa Kumar Jaisawal, Sunil Rathore
Publikováno v:
2021 International Conference on Control, Automation, Power and Signal Processing (CAPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e533233d4989be9f4ce2be2ef98d2b1
https://doi.org/10.1109/caps52117.2021.9730503
https://doi.org/10.1109/caps52117.2021.9730503
Publikováno v:
ICCCNT
Improved recycling folded cascode(RFC) operational transconductance amplifier(OTA) is presented in this brief. Performance of the proposed OTA is significantly enhanced in comparison to conventional folded cascode(FC) and recycling cascode(RFC) OTA b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acf38f45815d778cacf8045b34737444
https://doi.org/10.1109/icccnt51525.2021.9580095
https://doi.org/10.1109/icccnt51525.2021.9580095
Publikováno v:
Micro & Nano Letters. 14:1033-1036
In this work, a distinctive approach for the suppression of ambipolar behaviour of novel polarity control electrically doped hetero tunnel field effect transistor (TFET) has been reported. For this purpose, a wider band gap material, gallium arsenide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3896e19aded2532ae6e2afac7f9bac90
https://doi.org/10.1049/mnl.2018.5598
https://doi.org/10.1049/mnl.2018.5598
Publikováno v:
Transactions on Electrical and Electronic Materials. 20:467-472
In this paper, we have investigated non-leaky and leaky FE–DE heterostructure with undoped HfO2 and Zr doped HfO2 as a ferroelectric material. Use of undoped HfO2 in place of Zr doped HfO2 as a ferroelectric material will ease the deposition proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b65338ce45e086e6d11eb583023da4a3
https://doi.org/10.1007/s42341-019-00137-3
https://doi.org/10.1007/s42341-019-00137-3